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Device Characteristics of Nanoscale Metal/Insulator Tunnel Transistors in the Ballistic Quantum Transport Regime

机译：弹道量子输运系统中纳米金属/绝缘体隧道晶体管的器件特性

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Mincheol Shin;
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1. Device Characteristics of Nanoscale Metal/insulator Tunnel Transistors in the Ballistic Quantum Transport Regime [J] . Mincheol Shin Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2007,第1期

机译：弹道量子传输体系中纳米金属/绝缘体隧道晶体管的器件特性
2. Ballistic quantum transport in nanoscale Schottky-barrier tunnel transistors [J] . Ahn C., Shin M. IEEE transactions on nanotechnology . 2006,第3期

机译：纳米级肖特基势垒隧道晶体管中的弹道量子传输
3. Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor [J] . Vijay K. Arora, Michael L. P. Tan, Ismail Saad, Applied Physics Letters . 2007,第10期

机译：纳米级金属氧化物半导体场效应晶体管中的弹道量子传输
4. Device Characteristics of Nanoscale Metal/Insulator Tunnel Transistors in the Ballistic Quantum Transport Regime [C] . Mincheol Shin China International Conference on Nanoscience and Technology . 2007

机译：纳米级金属/绝缘子隧道晶体管中的装置特性在弹道量子传输方案中
5. Ballistic transport of hot electrons and intervalley resonant tunneling in semiconductor quantum well heterostructure devices. [D] . Carnahan, Robert Earl. 1994

机译：半导体量子阱异质结构器件中热电子的弹道传输和音程共振隧穿。
6. Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors [O] . Ji Ung Lee, Ramya Cuduvally, Prathamesh Dhakras, -1

机译：纳米晶体管的两参数准弹道传输模型
7. The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device [O] . Chong Lit Ho, Mallik Kanad, de Groot C. H. 2005

机译：垂直金属绝缘体半导体隧道晶体管：提出的Fowler-Nordheim隧道器件

Device Characteristics of Nanoscale Metal/Insulator Tunnel Transistors in the Ballistic Quantum Transport Regime

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