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4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications

机译：4H-siC功率mOsFET阻断1200V，采用与工业应用兼容的栅极技术

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Dethard Peters; Reinhold Schörner; Peter Friedrichs; Dietrich Stephani;
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1. Corrections to “600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V” [Nov 19 1792-1795] [J] . Agarwal Aditi, Han Kijeong, Jayant Baliga B. IEEE Electron Device Letters . 2020,第1期

机译：校正“在商业铸造中制造的600V 4H-SiC MOSFET，栅极氧化物厚度降低27nm以实现15V的IGBT兼容栅极驱动器[11月19日1792-1795]
2. 600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V [J] . Agarwal Aditi, Han Kijeong, Baliga B. Jayant IEEE Electron Device Letters . 2019,第11期

机译：在商用铸造工厂中制造的600 V 4H-SiC MOSFET，栅氧化层厚度减小了27 nm，从而实现了IGBT兼容的15 V栅极驱动
3. Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications [J] . Yun Nick, Lynch Justin, Sung Woongje Emerging and Selected Topics in Power Electronics, IEEE Journal of . 2020,第1期

机译：用于电源转换器应用的区域高效，600V 4H-SIC JBS二极管集成MOSFET（JBSFET）
4. 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications [C] . Dethard Peters, Reinhold Schoerner, Peter Friedrichs, 4th European Conference on Silicon Carbide and Related Materials (ECSCRM 2002); Sep 2-5, 2002; Linkoeping, Sweden . 2002

机译：具有与工业应用兼容的栅极技术的4H-SiC功率MOSFET阻断1200V
5. Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching [D] . Han, Kijeong. 2019

机译：1.2 kV 4H-SiC平面栅极功率MOSFET的设计，分析和优化，用于改进的高频切换
6. 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics [O] . Jaeyeop Na, Jinhee Cheon, Kwangsoo Kim 2021

机译：4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
7. High Voltage 4H-SiC Power MOSFETs with Boron doped gate oxide [O] . Soler, Víctor, Cabello, María, Berthou, Maxime, 2017

机译：硼掺杂栅极氧化物的高压4H-SiC功率MOSFET
8. Normally-off 4H-SiC Trenched Gate MOSFETs with High Mobility (Preprint) [R] . Wu, J., Hu, J., Zhao, J. H., 2007

机译：具有高迁移率的常闭4H-siC沟槽栅极mOsFET（预印刷）

4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications

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