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Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors

机译：siGe和siGe / si半导体中磷光体中心的太赫兹发射

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S. G. Pavlov; H. -w. Hübers; N. V. Abrosimov; H. Riemann D;
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1. Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors [J] . S.G. Pavlov, H.-W. Hubers, N.V. Abrosimov, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2008,第0期

机译：SiGe和SiGe / Si半导体中的磷光体中心的太赫兹发射
2. Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system [J] . Hamed Ghodsi, Hassan Kaatuzian Journal of Semiconductors . 2015,第5期

机译：SiGe-HBT半导体器件的物理特性修改，以提高太赫兹检测系统的性能
3. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures [J] . Zhukavin R. Kh, Kovalevsky K. A., Orlov M. L., Semiconductors . 2015,第1期

机译：单轴应力块状硅和SiGe / Si异质结构中施主光激发下的太赫兹范围自发发射
4. Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors [C] . S.G.Pavlov, H.-W. Huebers, N.V. Abrosimov, International Autuman Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2008

机译：SiGe和SiGe / Si半导体中磷光体中心的太赫兹排放
5. Analysis and design of Si/SiGe terahertz diodes. [D] . Bi, Xiaochuan. 2007

机译：Si / SiGe太赫兹二极管的分析和设计。
6. Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation [O] . R Ferragut, A Calloni, A Dupasquier, 2010

机译：SiGe / SOI外延半导体中的正电子An灭表征缺陷
7. Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors [O] . Pavlov Sergey, Hübers Heinz-Wilhelm, Abrosimov Nickolay, 2008

机译：SiGe和SiGe / Si半导体中的磷光体中心的太赫兹发射

Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors

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