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Modeling and estimation of total leakage current in nano-scaled CMOS devices considering the effect of parameter variation

机译：考虑参数变化影响的纳米级CmOs器件总漏电流建模与估算

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Saibal Mukhopadhyay; Kaushik Roy;
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年度 2003
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1. Modeling and Estimation of Total Leakage Current in Nano-scaled 7T SRAM Cell Considering the Effect of Parameter Variation [J] . Rashmi Bahal, Shyam Akashe International Journal of Engineering Research and Applications . 2012,第1期

机译：考虑参数变化影响的纳米级7T SRAM单元总漏电流的建模与估计
2. Modeling of radiation-induced leakage currents in CMOS/SOI devices [J] . Rios R., Smeltzer R.K. IEEE Transactions on Nuclear Science . 1991,第6期

机译：CMOS / SOI器件中辐射引起的泄漏电流建模
3. Accurate estimation of total leakage in nanometer-scale bulk CMOS circuits based on device geometry and doping profile [J] . Mukhopadhyay S., Raychowdhury A., Roy K. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems . 2005,第3期

机译：基于器件几何形状和掺杂轮廓的纳米级体CMOS电路中总泄漏的准确估计
4. Modeling and estimation of total leakage current in nano-scaled CMOS devices considering the effect of parameter variation [C] . Saibal Mukhopadhyay, Kaushik Roy International symposium on Low power electronics and design . 2003

机译：考虑参数变化影响的纳米级CMOS器件中总泄漏电流的建模和估计
5. Variability Modeling and Statistical Parameter Extraction for CMOS Devices [D] . Qian, Kun 2015

机译：CMOS器件的可变性建模和统计参数提取
6. Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device [O] . Yinhua Cui, Jeong Yeul Jeong, Yuan Gao, 2020

机译：接触塞沉积条件对多级CMOS逻辑互连器件中结漏电流和接触电阻的影响
7. Accurate estimation of total leakage current in scaled CMOS logic circuits based on compact current modeling [O] . Saibal Mukhopadhyay, Arijit Raychowdhury, Kaushik Roy 2013

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Modeling and estimation of total leakage current in nano-scaled CMOS devices considering the effect of parameter variation

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