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Carrier accumulation in silicon-on-insulator structures containing Ge nanocrystals in the burried SiO2 layer

机译：在掩埋的siO2层中含有Ge纳米晶体的绝缘体上硅结构中的载流子积累

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I. E. Tyschenkoa; A. A. Frantsuzovb; O. V. Naumovac; B. I. Fomind; V. P. Popovf;
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1. Silicon-on-Insulator Structures with a Nitrogenated Buried SiO2 Layer: Preparation and Properties [J] . Tyschenko I.E., Popov V.P. Semiconductors . 2011,第3期

机译：具有氮化的SiO2埋层的绝缘体上硅结构：制备和性能
2. Influence of the Deposition and Annealing Temperatures on the Luminescence of Germanium Nanocrystals Formed in GeOx Films and Multilayer Ge/SiO2 Structures [J] . Grachev D. A., Ershov A. V., Karabanova I. A., Physics of the solid state . 2017,第5期

机译：沉积和退火温度对Geox膜和多层GE / SiO2结构形成的锗纳米晶体发光的影响
3. Spectral characteristics of carrier transfer from Si cluster to nanocrystal in Si-rich-oxide/SiO2 multilayer films [J] . Xu Yanmei, Li Songtao, Zhao Zhanlong, Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2015,第Pta1期

机译：富硅氧化物/ SiO2多层膜中载流子从硅团簇转移到纳米晶体的光谱特性
4. Carrier accumulation in silicon-on-insulator structures containing Ge nanocrystals in the burried SiO_2 layer [C] . I. E. Tyschenko, A. A. Frantsuzov, O. V. Naumova, International Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2006

机译：在掩埋SiO2层中含有Ge纳米晶体的绝缘体结构中的载体积聚
5. Charge carrier dynamics in silicon-on-insulator and silicon/silicon dioxide/magnesium oxide heterostructures studied by second-harmonic generation. [D] . White, Yelena V. Shirokaya. 2005

机译：通过二次谐波产生研究了绝缘体上硅和硅/二氧化硅/氧化镁异质结构中的电荷载流子动力学。
6. Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers [O] . Mingqing Qian, Dan Shan, Yang Ji, 2016

机译：磷掺杂的Si纳米晶体/ SiO2多层膜中载流子传输行为随温度的转变
7. InP-nanocrystal monolayer deposition onto Silicon-on-Insulator structures. [O] . 2016

机译：Inp-纳米晶体单层沉积在绝缘体上硅结构上。

Carrier accumulation in silicon-on-insulator structures containing Ge nanocrystals in the burried SiO2 layer

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