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Optical and Electronic Characterization of a-SiGe:H Thin Films Prepared by a Novel Hollow Cathode Deposition Technique

机译：新型空心阴极沉积技术制备a-siGe：H薄膜的光学和电子特性

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R. J. Soukup; N. J. Ianno; Scott A. Darveau; Christopher L. Exstrom;
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1. Thin films of a-SiGe : H with device quality properties prepared by a novel hollow cathode deposition technique [J] . Soukup RJ, Ianno NJ, Darveau SA, Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2005,第1a4期

机译：通过新型空心阴极沉积技术制备的具有器件质量特性的a-SiGe：H薄膜
2. Characterization of Al-doped spinel LiMn{sub}2O{sub}4 thin film cathode electrodes prepared by Liquid Source Misted Chemical Deposition (LSMCD) technique [J] . Ki Woong Kim, Sun-Woo Lee, Kyoo-Seung Han, Electrochimica Acta . 2003,第28期

机译：液源雾化化学沉积（LSMCD）技术制备的掺铝尖晶石LiMn {sub} 2O {sub} 4薄膜阴极的表征
3. Structural and optical characterization of Bi_4Ti_3O_(12) thin films prepared by metallorganic solution deposition technique [J] . Xu-Sheng Wang, Ji-Wei Zhai, Liang-Ying Zhang, Infrared physics and technology . 1999,第1期

机译：金属有机溶液沉积技术制备的Bi_4Ti_3O_（12）薄膜的结构和光学表征
4. Optical and Electronic Characterization of a-SiGe:H Thin Films Prepared by a Novel Hollow Cathode Deposition Technique [C] . R. J. Soukup, N. J. lanno, Scott A. Darveau, Symposium Proceedings vol.808; Symposium on Amorphous and Nanocrystalline Silicon Science and Technology - 2004; 20040413-16; San Francisco,CA(US) . 2004

机译：新型空心阴极沉积技术制备的a-SiGe：H薄膜的光学和电子表征
5. Growth and characterization of silicon carbide thin films using a nontraditional hollow cathode sputtering technique. [D] . Huguenin-Love, James. 2010

机译：使用非传统空心阴极溅射技术生长和表征碳化硅薄膜。
6. Li-rich Thin Film Cathode Prepared by Pulsed Laser Deposition [O] . Binggong Yan, Jichang Liu, Bohang Song, -1

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7. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films [O] . Bolat, S., Tekcan, B., Ozgit-Akgun, C., 2015

机译：中空阴极等离子体辅助原子层沉积GaN薄膜在电子和光学器件中的应用

Optical and Electronic Characterization of a-SiGe:H Thin Films Prepared by a Novel Hollow Cathode Deposition Technique

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