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Role of Ion Mass, Implant Dose, and Wafer Temperature on End-of-Range Defects

机译：离子质量，植入剂量和晶圆温度对末端缺陷的影响

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S. Prussin; Kevin S. Jones;
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年度 1912
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1. Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO_2 interface [J] . J. J. Hamilton, N. E. B. Cowern, J. A. Sharp, Applied Physics Letters . 2006,第4期

机译：绝缘体上硅中超浅B注入的扩散和激活：范围末端缺陷溶解和掩埋的Si / SiO_2界面
2. Evolution of end-of-range defects in Si after Xe implantation studied by grazing incidence diffuse X-ray scattering [J] . L. Capello, T.H. Metzger Materials Science and Engineering. B, Solid-State Materials for Advanced Technology . 2004,第Dec期

机译：通过掠入射散射X射线散射研究了Xe注入后Si中端部缺陷的演变
3. Annealing Effect on Structural Defects in Low-Dose Separation-by-Implanted-Oxygen Wafers [J] . Masao TAMURA, Manabu ISHIMARU, Kenji HINODE, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第10A期

机译：退火对低剂量植入式氧气晶片分离中结构缺陷的影响
4. Proton implantation for effective electrical isolation of InP, InGaAs and GaAs: role of variable doses and implant temperature [C] . Ahmed S., Too P., Sealy B.J., Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th . 2002

机译：质子注入可有效地电隔离InP，InGaAs和GaAs：可变剂量和注入温度的作用
5. Body mass index as a predictive variable for select outcomes in treatment of articular cartilage defects of the knee with autologous chondrocyte implantation [D] . Mormino, Lori P. 2011

机译：体重指数作为选择结果的预测变量，以治疗膝关节的关节软骨植入膝关节缺陷
6. The role of ambient temperature and body mass on body temperature standard metabolic rate and evaporative water loss in southern African anurans of different habitat specialisation [O] . Mohlamatsane Mokhatla, John Measey, Ben Smit -1

机译：环境温度和体重对不同生境专业化的南部非洲无核动物的体温标准代谢率和蒸发水分流失的作用
7. Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface [O] . Hamilton, JJ, Cowern, NEB, Sharp, JA, 2006

机译：绝缘体上硅中超浅B注入的扩散和激活：范围末端缺陷溶解和掩埋的Si / SiO2界面
8. Formation of CoSi(sub 2) in SIMOX wafers by high dose Co implantation. [R] . T. P. Sjoreen R. Jebasinski K. Schmidt S. Mantl H. Holzbrecher 1991

机译：通过高剂量Co注入在sImOX晶片中形成Cosi（sub 2）。

Role of Ion Mass, Implant Dose, and Wafer Temperature on End-of-Range Defects

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