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Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth

机译：使用同质外延网生长将螺旋位错限制在（0001）4H-siC外延层中的预定横向位置

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Philip G. Neudeck; David J. Spry; Andrew J. Trunek; J. Anthony Powell; Glenn M. Beheim;
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年度 2014
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1. Growth of Thick 4H-SiC(0001) Epilayers and Reduction of Basal Plane Dislocations [J] . Hidekazu TSUCHIDA, Isaho KAMATA, Toshiyuki MIYANAGI, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2005,第24a27期

机译：厚4H-SiC（0001）外延层的生长和基底平面位错的减少
2. Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers [J] . S. I. Maximenko, J. A. Freitas Jr., R. L Myers-Ward, Journal of Applied Physics . 2010,第1期

机译：螺纹和位错对4H-SiC同质外延层输运性能的影响
3. Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations [J] . Ul Hassan Jawad, Karhu Robin, Lilja Louise, Nature reviews Cancer . 2019,第6期

机译：高功率器件的4H-SIC（0001）的晶圆刻度为4H-SIC（0001）：不同气相化学和生长速率限制的影响
4. Confinement of screw dislocations to predetermined lateral positions in (0001) 4H-SiC epilayers using homoepitaxial web growth [C] . Philip G.Neudeck, David J.Spry, Andrew J.Trunek, Materials Research Society Symposium . 2003

机译：使用胎儿卷网生长将螺旋脱位限制在（0001）4H-SiC脱壁中的预定横向位置
5. Growth of low basal plane dislocation density epilayers of 4H-silicon carbide for stable bipolar diodes. [D] . Zhang, Zehong. 2005

机译：用于稳定双极二极管的4H-碳化硅的低基面位错密度外延层的生长。
6. Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle [O] . Keiko Masumoto, Hirokuni Asamizu, Kentaro Tamura, 2014

机译：1°偏角的4H-SiC硅面同质外延层生长过程中3C夹杂物形成的抑制
7. Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition [O] . Guosheng Sun, Jin Ning, Quancheng Gong, 2016

机译：低压热壁化学气相沉积4H-siC外延层的同质外延生长及表征

Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth

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