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Gate Length and Performance Scaling of Undoped-Body Extremely Thin SOI MOSFETs

机译：未掺杂体超薄sOI mOsFET的栅极长度和性能缩放

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Amlan Majumdar; Xinlin Wang; Arvind Kumar; Judson R. Holt; David Dobuzinsky; Raj Venigalla; Christine Ouyang; Steven J. Koester; Wilfried Haensch;
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年度 2014
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1. Undoped-Body Extremely Thin SOI MOSFETs With Back Gates [J] . Majumdar A., Zhibin Ren, Koester S.J., Electron Devices, IEEE Transactions on . 2009,第10期

机译：具有背栅的无掺杂，超薄SOI MOSFET
2. Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length [J] . Khakifirooz A., Cheng K., Reznicek A., Electron Device Letters, IEEE . 2012,第2期

机译：超薄SOI（ETSOI）MOSFET可扩展至20nm以下栅极长度
3. Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SoI (ETSoI) MOSFETs [J] . IEEE Electron Device Letters . 2014,第3期

机译：背栅偏置应力对极薄SoI（ETSoI）MOSFET器件特性的影响
4. Back Gate Bias Stressing on Extremely Thin SOI (ETSOI) MOSFETs with Gate Last Process Integration [C] . Zhaoyun Tang, Bo Tang, Lichuan Zhao, International symposium on silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 4;Meeting of the Electrochemical Society . 2014

机译：具有栅极最后工艺集成的超薄SOI（ETSOI）MOSFET的背栅偏置应力
5. Fabrication and performance of submicron gate length gallium arsenide-channel MOSFETs using indium aluminum phosphide oxide as the gate dielectric. [D] . Zhang, Jing. 2008

机译：使用磷化铟铝作为栅介质的亚微米栅长砷化镓沟道MOSFET的制备和性能。
6. Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET [O] . Mohd F. Mohd Razip Wee, Arash Dehzangi, Sylvain Bollaert, -1

机译：栅极长度变化对栅极优先自对准In0.53Ga0.47As MOSFET性能的影响
7. On the Performance of Single-Gated Ultrathin-Body SOI Schottky-Barrier MOSFETs [O] . Knoch J., Zhang M., Mantl S., 2006

机译：单栅极超薄体SOI肖特基势垒MOSFET的性能研究

Gate Length and Performance Scaling of Undoped-Body Extremely Thin SOI MOSFETs

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