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Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters

机译：用于红外光发射器的硅和D波段发光中的位错

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V. Kveder; M. Kittler;
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年度 2015
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1. Silicon based light emitters utilizing radiation from dislocations; electric field induced shift of the dislocation-related luminescence [J] . Arguirov T, Mchedlidze T, Kittler M, Physica, E. Low-dimensional systems & nanostructures . 2009,第6期

机译：利用位错辐射的硅基发光体;电场引起的位错相关发光的位移
2. Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon [J] . N.A. Sobolev, P.N. Aruev, A.E. Kalyadin, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2014,第Null期

机译：电子辐照硅退火制备具有位错相关发光的发光二极管
3. Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence [J] . Sobolev N.A. Semiconductors . 2010,第1期

机译：具有位错相关发光的硅发光结构的注入技术中的缺陷工程
4. Towards an efficient light-emitting source based on self-implanted silicon with dislocation-related luminescence [C] . D S Korolev, A A Nikolskaya, A N Tereshchenko, International School and Conference "Saint Petersburg OPEN" . 2020

机译：朝向基于自植入硅的高效发光源，具有与错位相关的发光
5. Photoluminescence and electroluminescence of near-infrared emitting lanthanide complexes in conjugated polymer hosts. [D] . Harrison, Benjamin Scott. 2003

机译：共轭聚合物主体中近红外发射镧系元素络合物的光致发光和电致发光。
6. Light‐Emitting Diodes: Sensitized Yb3+ Luminescence in CsPbCl3 Film for Highly Efficient Near‐Infrared Light‐Emitting Diodes (Adv. Sci. 4/2020) [O] . Ayumi Ishii, Tsutomu Miyasaka 2020

机译：发光二极管：用于高效近红外发光二极管的CsPbCl3薄膜中的敏化Yb3 +发光（Adv。Sci。4/2020）
7. Light‐Emitting Diodes: Sensitized Yb 3+ Luminescence in CsPbCl 3 Film for Highly Efficient Near‐Infrared Light‐Emitting Diodes (Adv. Sci. 4/2020) [O] . Ayumi Ishii, Tsutomu Miyasaka 2020

机译：发光二极管：CSPBCL 3膜中的敏化Yb 3+发光，用于高效近红外发光二极管（ADV。SCI。4/2020）

Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters

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