首页> 外文OA文献 >Erbium-doped thin amorphous carbon films prepared by mixed CVD sputtering

【2h】

Erbium-doped thin amorphous carbon films prepared by mixed CVD sputtering

机译：掺杂CVD溅射制备的掺铒薄非晶碳薄膜

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
G. Speranzaa; L. Calliaria; M. Ferrarib; A. Chiaserac; K. Tran Ngocb; A. M. Baranove;
展开▼
作者单位

展开▼
年度 2004
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Erbium-doped thin amorphous carbon films prepared by mixed CVD sputtering [J] . Speranza G, Calliari L, Ferrari M, Applied Surface Science . 2004,第1a4期

机译：通过混合CVD溅射制备的掺-非晶碳薄膜
2. Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD [J] . Hui-Lin Hsu, I-Ju Teng, Jenh-Yih Juang, Materials . 2014,第3期

机译：掺A非晶碳基薄膜：通过低温RF-PEMOCVD制备的光子材料
3. Fluorine incorporated amorphous carbon thin films prepared by Surface Wave Microwave Plasma CVD [J] . Golap Kalita, Hare Ram Aryal, Sudip Adhikari Diamond and Related Materials . 2008,第7a10期

机译：通过表面波微波等离子体CVD制备的含氟非晶碳薄膜
4. Effect of Gas Flow Rate on The Properties of Amorphous Carbon Thin Films Prepared by Thermal CVD using Camphoric Carbon Precursor [C] . K. Dayana, A. N. Fadzilah, A. Ishak, International Conference on Nanoscience Nanotechnology . 2014

机译：气体流速对使用Camphoric碳前体制备的无定形碳薄膜性质的影响
5. Erbium-doped oxide films and devices prepared by sputtering for optoelectronic applications. [D] . Li, Cheng-chung. 1997

机译：通过溅射制备的掺b氧化物膜和器件，用于光电应用。
6. Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD [O] . Hui-Lin Hsu, Keith R. Leong, I-Ju Teng, 2014

机译：掺b非晶碳基薄膜：通过低温RF-PEMOCVD制备的光子材料
7. Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD [O] . Hui-Lin Hsu, Keith R. Leong, I-Ju Teng, 2014

机译：掺铒非晶碳基薄膜：低温RF-pEmOCVD制备的光子材料
8. Epitaxial Pb(Zr(sub x)Ti(sub 1(minus)x))O(sub 3)/SrRuO(sub 3) (x = 0, 0.35, 0.65) multilayer thin films on SrTiO(sub 3)(100) and MgO(100) prepared by MOCVD and RF sputtering [R] . Foster, C. M., Csencsits, R., Baldo, P. M., 1995

机译：srTiO（sub 3）（100）上的外延pb（Zr（sub x）Ti（sub 1（minus）x））O（sub 3）/ srRuO（sub 3）（x = 0,0.35,0.65）多层薄膜通过mOCVD和RF溅射制备mgO（100）和mgO（100）

Erbium-doped thin amorphous carbon films prepared by mixed CVD sputtering

著录项

引文网络

相似文献

相关主题

期刊订阅