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Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors

机译：用于准弹道式CmOs晶体管的具有弛豫/应变层的新型源异质结结构

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Tomohisa Mizuno; Mitsuo Hasegawa; Toshiyuki Sameshima;
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年度 2016
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1. Single Source Heterojunction Metal-Oxide-Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature [J] . Tomohisa Mizuno, Yoshihiko Moriyama, Tsutomu Tezuka, Japanese journal of applied physics.Part 1.Regular papers & short notes . 2011,第1ISSUE1期

机译：准弹道器件的单源异质结金属氧化物半导体晶体管：低温下源异质结构和电子速度特性的优化
2. New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal-Oxide-Semiconductor Transistors: Relaxation Technique of Strained Substrates and Design of Sub-10nm Devices [J] . Tomohisa Mizuno, Naoki Mizoguchi, Kotaro Tanimoto, Japanese journal of applied physics . 2010,第4issue2期

机译：用于准弹道互补金属氧化物半导体晶体管的具有松弛/应变半导体的新源异质结结构：应变衬底的松弛技术和10nm以下器件的设计
3. Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure [J] . Singh Balraj, Rai Trailokya Nath, Gola Deepti, Materials science in semiconductor processing . 2017,第期

机译：铁电叠栅氧化物异质结电静态掺杂源/排水双栅极隧道场效应晶体管：卓越的结构
4. Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors [C] . Tomohisa Mizuno, Mitsuo Hasegawa, Toshiyuki Sameshima Technology evolution for silicon nano-electronics . 2010

机译：用于准弹道CMOS晶体管的具有松弛/应变层的新型源极异质结结构
5. InP/InGaAs heterojunction bipolar transistors and field-effect transistors grown by gas -source molecular beam epitaxy. [D] . Kuo, Hao-chung. 1999

机译：气源分子束外延生长的InP / InGaAs异质结双极晶体管和场效应晶体管。
6. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices [O] . Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone -1

机译：作为后CMOS器件基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
7. Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction [O] . Masoud Sabaghi 2020

机译：具有源极和通道异质结的III-V隧道场效应晶体管的新型量子结构
8. AlGaAs/InGaAs/GaAs Strained-Layer Heterojunction Bipolar Transistors by Molecular Beam Epitaxy [R] . Sullivan, G. J., Asbeck, P. M., Chang, M. F., 1986

机译：分子束外延的alGaas / InGaas / Gaas应变层异质结双极晶体管

Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors

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