首页> 外文OA文献 >New generation of SiC based biodevices implemented on 4 ” wafers

【2h】

New generation of SiC based biodevices implemented on 4 ” wafers

机译：新一代基于siC的生物设备在4“晶圆上实现

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
P. Godignona; I. Martin; G. Gabriel; R. Gomez; M. Placidi; R. Villa;
展开▼
作者单位

展开▼
年度 2016
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. A Novel 100 MHz–45 GHz Input-Termination-Less Distributed Amplifier Design With Low-Frequency Low-Noise and High Linearity Implemented With A 6 Inch 0.15 μm GaN-SiC Wafer Process Technology [J] . Kevin W. Kobayashi, Dan Denninghoff, Dain Miller IEEE Journal of Solid-State Circuits . 2016,第9期

机译：采用6英寸0.15μmGaN-SiC晶片工艺技术实现的具有低频低噪声和高线性度的新颖的100 MHz–45 GHz更少输入端分布分布式放大器设计
2. A grinding-based manufacturing method for silicon wafers: generation mechanisms of central dimples on ground wafers [J] . X. H. Zhang, Z. J. Pei, Graham R. Fisher International Journal of Machine Tools & Manufacture: Design, research and application . 2006,第3a4期

机译：基于研磨的硅晶片制造方法：研磨晶片上中心凹痕的产生机理
3. A GRINDING-BASED MANUFACTURING METHOD FOR SILICON WAFERS: GENERATION MECHANISMS OF CENTRAL BUMPS ON GROUND WAFERS [J] . Wangping Sun, Z. J. Pei, Graham R. Fisher Machining Science and Technology . 2006,第2期

机译：硅晶片的基于磨削的制造方法：地基晶片上中央凸点的产生机理
4. New generation of SiC based biodevices implemented on 4' wafers [C] . P. Godignon, I. Martin, G. Gabriel, Silicon carbide and related materials 2009 . 2010

机译：在4'晶圆上实现的新一代基于SiC的生物设备
5. Development of an Industrial Fabrication Process for Next Generation, Thinner and Larger Crystalline Silicon (c-Si) Wafer-Based Solar Cells. [D] . Nguyen, Anh V. 2012

机译：开发用于下一代，更薄，更大晶体硅（c-Si）晶圆的太阳能电池的工业制造工艺。
6. Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping [O] . Yong Hu, Dong Shi, Ye Hu, 2018

机译：超声化学机械抛光与超声研磨相结合的单晶碳化硅晶片材料去除及表面生成研究
7. Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer [O] . Massoubre David, Wang Li, Hold Leonie, 2015

机译：Si晶片上生长的垂直导电单晶SiC基Bragg反射镜

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

客服微信
服务号