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Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si3N4 Energy-Absorbing Layer

机译：采用si3N4能量吸收层的标准氟离子注入制备增强型alGaN / GaN HEmT

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Hongwei Chen; Z Maojun Wang; Kevin J. Chen;
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1. Enhancement-mode AlGaN/GaN HEMTs fabricated by standard fluorine ion implantation with a Si_3N_4 energy-absorbing layer [J] . Chen H., Wang M., Chen K.J. Electrochemical and solid-state letters . 2011,第6期

机译：通过标准氟离子注入和Si_3N_4能量吸收层制造的增强模式AlGaN / GaN HEMT
2. Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress [J] . Sun Wei-Wei, Zheng Xue-Feng, Fan Shuang, 中国物理：英文版 . 2015,第001期

机译：导通状态栅极过驱动应力下氟离子注入增强型AlGaN / GaN HEMT的降解机理
3. DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess [J] . Jung Hyun-Wook, Chang Sung-Jae, Do Jae-Won, ECS Journal of Solid State Science and Technology . 2018,第4期

机译：DC和RF特性的增强型Al2O3 / AlGaN / GaN MIS-HEMT由浅凹槽制成的氟处理和深凹陷
4. Enhancement-mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation [C] . Hongwei Chen, Maojun Wang, Kevin J. Chen International conference on compound semiconductor Manufacturing Technology;CS MANTECH . 2011

机译：通过标准氟离子注入制造的增强模式AlGaN / GaN HEMT
5. Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface [D] . Suri, Suraj. 2016

机译：GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
6. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer [O] . Chao Yang, Xiaorong Luo, Tao Sun, 2019

机译：在SiNx钝化层中注入氟离子的高击穿电压和低动态导通电阻AlGaN / GaN HEMT
7. Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si(3)N(4) Energy-Absorbing Layer [O] . Chen Hongwei, Wang Maojun, Chen Kevin J. 2011

机译：通过标准氟离子注入与Si（3）N（4）能量吸收层制造的增强模式AlGaN / GaN HEMT

Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si3N4 Energy-Absorbing Layer

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