首页> 外文OA文献 >Microtrench Formation in Polysilicon Plasma Etching over Thin Gate Oxide

【2h】

Microtrench Formation in Polysilicon Plasma Etching over Thin Gate Oxide

机译：薄栅氧化物多晶硅等离子体刻蚀中微缝的形成

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
T. J. Dalton; J. C. Arnold; H. H. Sawin; S. Swan; D. Corliss;
展开▼
作者单位

展开▼
年度 1993
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching [J] . S. A. Vitale, B. A. Smith Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure . 2003,第5期

机译：减少高密度等离子体多晶硅栅极蚀刻过程中由等离子体氧化引起的硅凹陷
2. Ultrathin nitride/oxide (N/O) gate dielectrics for p/sup +/-polysilicon gated PMOSFETs prepared by a combined remote plasma enhanced CVD/thermal oxidation process [J] . Wu Y., Lucovsky G. IEEE Electron Device Letters . 1998,第10期

机译：用于p / sup +/-多晶硅栅极PMOSFET的超薄氮化物/氧化物（N / O）栅极电介质，通过远程等离子增强CVD /热氧化工艺组合制备
3. Effects of Polysilicon Gate Doping Concentration on Plasma Charging Damage in Ultrathin Gate Oxides [J] . Chi-Chun Chen, Horng-Chih Lin, Chun-Yen Chang, Electrochemical and solid-state letters . 2000,第2期

机译：多晶硅栅掺杂浓度对超薄栅氧化物等离子体充电损伤的影响
4. Evaluation of plasma-induced damages to thin oxides during polysilicon gate etching in gas-puff chlorine plasmas [C] . Shingo Tomohisa, Masakazu Taki, Kenji Shintani Symposium on semiconductors and integrated circuits technology . 1999

机译：气态氯等离子体中多晶硅栅极蚀刻过程中等离子体诱导的薄氧化物损伤的评估
5. The characterization of octafluorocyclobutane-based plasma discharges for the selective etching and processing of silicon dioxide and low-K dielectric thin films. [D] . Barela, Marcos J. 2003

机译：基于八氟环丁烷的等离子放电的特征，用于二氧化硅和低K介电薄膜的选择性刻蚀和处理。
6. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment [O] . Ching-Lin Fan, Fan-Ping Tseng, Chiao-Yuan Tseng 2018

机译：CF4等离子体处理HfO2栅电介质的非晶铟镓锌氧化物薄膜晶体管的电性能和可靠性提高
7. Reduction of microtrenching and island formation in oxide plasma etching by employing electron beam charge neutralization [O] . M. Watanabe, D. M. Shaw, G. J. Collins 2001

机译：通过采用电子束充电中和通过采用电子束电荷蚀刻在氧化物等离子体蚀刻中的微生物和岛形成
8. Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETS with Thin Gate Oxides [R] . Asenov, Asen, Saini, S. 2000

机译：多晶硅栅极对具有薄栅氧化层的亚100nm mOsFET中随机掺杂诱导阈值电压波动的影响

Microtrench Formation in Polysilicon Plasma Etching over Thin Gate Oxide

著录项

引文网络

相似文献

相关主题

期刊订阅