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A New Method for Revealing Striations in High-Resistive Floating-Zone Silicon Crystals

机译：一种揭示高阻抗浮区硅晶体中条纹的新方法

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A. J. R. De Kock; P. G. T. Boonen;
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1. Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method [J] . R. Bairava Ganesh, Hitoshi Matsuo, Takahiro Kawamura, Journal of Crystal Growth . 2008,第11期

机译：用生长诱导条纹法估算单向凝固多晶硅的生长速率
2. Influence of reduced working frequencies on the floating-zone growth of silicon single crystals [J] . Menzel R., Rost A., Luedge A., Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2011,第10期

机译：降低的工作频率对硅单晶浮区生长的影响
3. Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals [J] . G.Raming, A.Muiznieks, A.Muhlbauer Journal of Crystal Growth . 2001,第1a2期

机译：大型硅单晶浮区生长过程中电磁场对流体运动和电阻率分布影响的数值研究
4. Numerical simulation of crystal rotation effect on the solid-liquid interface in the floating-zone (FZ) silicon [C] . ue-Feng Han, Satoshi Nakano, Xin Liu, 応用物理学会春季学術講演会 . 2018

机译：浮区（FZ）硅中固液界面晶体旋转效应的数值模拟
5. Deep level defects in silicon carbide crystals grown by halide CVD method [D] . Huh, SungWook 2006

机译：卤化物CVD法生长的碳化硅晶体的深层缺陷
6. Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy [O] . Marius van den Berg, Ardeshir Moeinian, Arne Kobald, 2020

机译：使用尖端增强拉曼光谱揭示单硅芯壳纳米线的局部结晶度
7. Imaging-plate X-ray topography analysis system for characterizing growth striations in silicon crystals [O] . S. Kawado, S. Kojima, Y. Kudo, 1993

机译：用于表征硅晶体生长条件的成像板X射线图分析系统
8. MCZ: Striations in CZ silicon crystals grown under various axial magnetic field strengths [R] . Kim, G. K. M. 1985

机译：mCZ：在各种轴向磁场强度下生长的CZ硅晶体中的条纹

A New Method for Revealing Striations in High-Resistive Floating-Zone Silicon Crystals

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