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Research on Multilevel Resistive Switching of Cu/HfO2/TiN Structure and its Switching Mechanism

机译：Cu / HfO2 / TiN结构多级电阻切换及其切换机理研究

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Wang Baolin; Zhang Kailiang; Wang Fang; Sun Kuo; Zhao Jinshi; Feng Yulin;
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1. AlTiN、AlTiN-Cu和AlTiN/AlTiN-Cu涂层的微观结构、力学性能及铣削性能 [J] . 陈浩, 陈康华, 徐银超, 中南大学学报（英文版） . 2018,第003期
2. Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure [J] . Liu Jian, Yang Huafeng, Ma Zhongyuan, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2018,第2期

机译：AL2O3 / HFO2 / AL2O3夹层结构电阻切换单元中多级存储与切换动力学的特性
3. Charge transport and bipolar switching mechanism in a Cu/HfO2/Pt resistive switching cell [J] . Tingting Tan, Tingting Guo, Zhihui Wu, 中国物理：英文版 . 2016,第011期

机译：Cu / HfO2 / Pt电阻式开关电池中的电荷传输和双极开关机制
4. The improved resistive switching of HfO2:Cu film with multilevel storage [J] . Tingting Guo, Tingting Tan, Zhengtang Liu Journal of Materials Science . 2015,第21期

机译：具有多级存储的HfO2：Cu膜的改进电阻切换
5. Research on Multilevel Resistive Switching of Cu/HfO_2/TiN Structure and its Switching Mechanism [C] . Wang Baolin, Zhang Kailiang, Wang Fang, China Semiconductor Technology International Conference . 2014

机译：Cu / HfO_2 / TiN结构的多级电阻转换及其转换机理的研究
6. Fabrication of Nano-Crossbar Resistive Switching Memory Based on the Copper-Tantalum Pentoxide-Platinum Device Structure [D] . Ochia, Adaku 2012

机译：基于五氧化二铜-铂金器件结构的纳米交叉电阻开关存储器的制作
7. Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory [O] . Meiyun Zhang, Shibing Long, Guoming Wang, 2014

机译：Cu / HfO2 / Pt电阻式开关存储器中复位开关的统计特性
8. Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory [O] . Meiyun Zhang, Shibing Long, Guoming Wang, 2015

机译：Cu / HfO2 / Pt电阻式开关存储器中复位开关的统计特性

Research on Multilevel Resistive Switching of Cu/HfO2/TiN Structure and its Switching Mechanism

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