首页> 外文OA文献 >Characterization of GaN p-n junction Grown on Si (111) Substrate by Plasma-Assisted Molecular Beam Epitaxy

【2h】

Characterization of GaN p-n junction Grown on Si (111) Substrate by Plasma-Assisted Molecular Beam Epitaxy

机译：用等离子体辅助分子束外延法在si（111）衬底上生长GaN p-n结的表征

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Rosfariza Radzali; Mohd Anas Ahmad; Zainuriah Hassan; Norzaini Zainal; Yam Fong Kwong; Chin Che Woei; Mohd Zaki; Mohd Yusoff; Siti Khadijah; Mohd Bakhori; Yushamdan Yusof I;
展开▼
作者单位

展开▼
年度 2016
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers [J] . Kukushkin S. A., Mizerov A. M., Grashchenko A. S., Semiconductors . 2019,第2期

机译：Si（111）基材上等等离子体辅助分子束外延生长的GaN层的光电性能和SiC / Si（111）外延层
2. Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy [J] . Shen X.Q., Takahashi T., Rong X., Applied Physics Letters . 2013,第23期

机译：超薄AlN / GaN超晶格中间层在等离子体辅助分子束外延生长在Si（110）和Si（111）衬底上生长的GaN膜的应变工程中的作用
3. Role of an ultra-thin AIN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy [J] . X. Q. Shen, T. Takahashi, X. Rong, Applied Physics Letters . 2013,第23期

机译：超薄AIN / GaN超晶格中间层在等离子体辅助分子束外延生长在Si（110）和Si（111）衬底上生长的GaN薄膜的应变工程中的作用
4. Characterization of GaN p-n junction Grown on Si (111) Substrate by Plasma-Assisted Molecular Beam Epitaxy [C] . ROSFARIZA Radzali, MOHD Anas Ahmad, Zainuriah Hassan, International Conference on Nanomaterials, Synthesis and Characterization . 2012

机译：等离子体辅助分子束外延在Si（111）底物上生长的GaN P-n结的表征
5. Characterization of Polar, Semi-Polar, and Non-Polar p-n Homo and Hetero-junctions grown by Ammonia Molecular Beam Epitaxy. [D] . Hurni, Christophe Antoine. 2012

机译：氨分子束外延生长的极性，半极性和非极性p-n同质和异质结的表征。
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . Ing-Song Yu, Chun-Pu Chang, Chung-Pei Yang, 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制
7. Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.udud [O] . L S Chuah, Hassan Z., Abu Hassan H 2007

机译：射频等离子体辅助分子束外延对Si（111）上生长的GaN薄膜进行光学表征。 ud ud

Characterization of GaN p-n junction Grown on Si (111) Substrate by Plasma-Assisted Molecular Beam Epitaxy

著录项

引文网络

相似文献

相关主题

期刊订阅