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Engineering Band-Edge High-κ/Metal Gate n-MOSFETs with Cap Layers Containing Group IIA and IIIB Elements by Atomic Layer Deposition

机译：具有帽层的工程带边高κ/金属栅极n-mOsFET通过原子层沉积包含IIa和IIIB族元素

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H. Jagannathan A; L. F. Edge A; P. Jamison A; R. Iijima B; V. Narayanan C; V. K. Paruchuri A; R. D. Clark D; S. Consiglio D; C. S. Wajda D; G. J. Leusink D;
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1. Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks [J] . Kyoung H. Kim, Roy G. Gordon, Andrew Ritenour, Applied Physics Letters . 2007,第21期

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2. Plasma atomic layer deposited TiN metal gate for three dimensional device applications: Deposition temperature, capping metal and post annealing [J] . Seung Chan Heo, Changhwan Choi Microelectronic Engineering . 2012,第Juna期

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3. Physical and Memory Characteristics of Atomic-Layer-Deposited High-κ Hafnium-Aluminum-Oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate [J] . Atanu Das, Siddheswar Maikap, Wei-Chih Li, Japanese journal of applied physics . 2009,第5issue2期

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4. Engineering Band-Edge High-κ/Metal Gate n-MOSFETs with Cap Layers Containing Group IIA and IIIB Elements by Atomic Layer Deposition [C] . H. Jagannathan, L. F. Edge, P. Jamison, Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment . 2009

机译：工程带边缘高κ/金属栅极n-MOSFET，其盖层通过原子层沉积包含IIA和IIIB组元素
5. Metal-gate/high-k dielectric stack engineering by atomic layer deposition: Materials issues and electrical properties. [D] . Sreenivasan, Raghavasimhan. 2007

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6. Enhanced activity of highly conformal and layered tin sulfide (SnSx) prepared by atomic layer deposition (ALD) on 3D metal scaffold towards high performance supercapacitor electrode [O] . Mohd Zahid Ansari, Nazish Parveen, Dip K. Nandi, -1

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7. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system [O] . Takeshi Aoki, Noboru Fukuhara, Takenori Osada, 2015

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8. Shape-Selective Catalysts for Fischer-Tropsch Chemistry: Atomic Layer Deposition of Active Catalytic Metals. Activity Report: January 1, 2005 September 30, 2005 [R] . Cronauer, D. C. 2011

机译：Fischer-Tropsch化学形状选择性催化剂：活性催化金属的原子层沉积。活动报告：2005年1月1日，2005年9月30日

Engineering Band-Edge High-κ/Metal Gate n-MOSFETs with Cap Layers Containing Group IIA and IIIB Elements by Atomic Layer Deposition

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