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Critical Temperature Switch: A Highly Sensitive Thermosensing Device Consisting of Subthreshold MOSFET Circuits

机译：临界温度开关：由亚阈值mOsFET电路组成的高灵敏度热敏检测器件

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Atsushi Hagiwara; Tetsuya Hirose; Tetsuya Asai; Yoshihito Amemiya;
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年度 2016
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1. Threshold-Logic Devices Consisting of Subthreshold CMOS Circuits [J] . Taichi OGAWA, Tetsuya HIROSE, Tetsuya ASAI, IEICE Transactions on fundamentals of electronics, communications & computer sciences . 2009,第1期

机译：亚阈值CMOS电路组成的阈值逻辑器件
2. Low-power temperature-to-frequency converter consisting of subthreshold CMOS circuits for integrated smart temperature sensors [J] . Ueno K., Asai T., Amemiya Y. Sensors and Actuators, A. Physical . 2011,第1期

机译：低功耗温度至频率转换器，由亚阈值CMOS电路组成，用于集成式智能温度传感器
3. Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation [J] . Moges Kidist, Hosoi Takuji, Shimura Takayoshi, Applied physics express . 2021,第9期

机译：由超高温度栅极氧化制造的良好平衡的N型和P沟道MOSFET构成的4H-SIC CMOS电路的演示
4. Critical Temperature Switch: A Highly Sensitive Thermosensing Device Consisting of Subthreshold MOSFET Circuits [C] . Hagiwara, A., Hirose, . 2006

机译：临界温度开关：由亚阈值MOSFET电路组成的高灵敏度热敏器件
5. Thermal and performance modeling of nanoscale MOSFETs, carbon nanotube devices and integrated circuits. [D] . Akturk, Akin. 2006

机译：纳米级MOSFET，碳纳米管器件和集成电路的热和性能建模。
6. Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications [O] . Chao-Tsung Ma, Zhen-Huang Gu 2021

机译：用于中频到高功率应用的宽带隙半导体开关装置的驱动电路综述
7. CMOS Voltage and Current Reference Circuits consisting of Subthreshold MOSFETs – Micropower Circuit Components for Power-Aware LSI Applications – [O] . Ken Ueno 2010

机译：CMOS电压和电流参考电路由亚阈值MOSFET组成 - 用于电源感知LSI应用的MicroPower电路组件 -
8. MOSFET Replacement Devices for Energy-Efficient Digital Integrated Circuits [R] . Kam, H. 2009

机译：用于节能数字集成电路的mOsFET替换器件

Critical Temperature Switch: A Highly Sensitive Thermosensing Device Consisting of Subthreshold MOSFET Circuits

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