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Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors

机译：用于辐射探测器的高电阻率硅寿命估计的表面钝化层评估

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J. M. Rafí; L. Cardona-safont; M. Zabala; C. Boulord; F. Campabadal; G. Pellegrini; M. Lozano; E. Simoen; C. Claeys;
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1. Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors [J] . J.M. Raff, L. Cardona-Safont, M Zabala, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2008,第0期

机译：用于辐射检测器高电阻率硅的大量寿命层表面钝化层的评价
2. Effect of Radical-Doped n~+ Back Surface Field Layers on the Effective Minority Carrier Lifetimes of Crystalline Silicon with Amorphous Silicon Passivation Layers Deposited by Catalytic Chemical Vapor Deposition [J] . Taro Hayakawa, Tatsunori Ohta, Yuki Nakashima, Japanese journal of applied physics . 2012,第10ISSUE1期

机译：自由基掺杂n〜+背表面场层对通过化学气相沉积沉积的非晶硅钝化层的结晶硅有效少数载流子寿命的影响
3. Evaluation of the influence of an embedded porous silicon layer on the bulk lifetime of epitaxial layers and the interface recombination at the epitaxial layer/porous silicon interface [J] . Hariharsudan Sivaramakrishnan Radhakrishnan, Frederic Dross, Maarten Debucquoy Progress in photovoltaics . 2014,第11期

机译：评估嵌入式多孔硅层对外延层的整体寿命以及外延层/多孔硅界面处界面复合的影响
4. Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors [C] . J.M. Rafi, L. Cardona-Safont, M. Zabala, International Autuman Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2008

机译：用于辐射探测器高电阻率硅的大量寿命层的表面钝化层评价
5. Bulk Lifetime Limiting Defects in Czochralski Silicon and Graphene Oxide as a Surface Passivation Material [D] . Vaqueiro Contreras, Michelle. 2019

机译：大量寿命限制Czochralski硅和石墨烯氧化物的缺陷作为表面钝化材料
6. Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions [O] . Kangping Liu, Odile Cristini-Robbe, Omar Ibrahim Elmi, 2019

机译：隧穿原子层沉积氧化铝：硅结的表面钝化的相关结构/电性能研究
7. Low-temperature silicon surface passivation for bulk lifetime studies based on Corona-charged Al2O3 [O] . Boris A. Veith-Wolf, Jan Schmidt 2019

机译：基于电晕充电的Al2O3的散装寿命研究的低温硅表面钝化
8. Study of bulk damage in high resistivity silicon detectors irradiated by high dose of (sup 60)Co (gamma)-radiation [R] . Li, Z., Li, C. J. 1996

机译：高剂量（sup 60）Co（γ）辐射照射高电阻率硅探测器的体损害研究

Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors

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