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Effect of Bi Additions upon the Physical Properties of Germanium Telluride Glassy Semiconductors

机译：Bi添加量对碲化锗玻璃半导体物理性质的影响

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Ambika Sharma; P. B. Barman;
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1. Effect of tellurium addition on the optical and physical properties of germanium selenide glassy semiconductors [J] . El-Kabany N. Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2010,第1期

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2. Effect of germanium addition on the physical properties of Se-Te glassy semiconductors [J] . Mainika, Sharma P, Thakur N Philosophical magazine: structure and properties of condensed matter . 2009,第33期

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3. Effect of tellurium addition on the physical properties of germanium selenide glassy semiconductors [J] . Sharma P, Katyal SC Physica, B. Condensed Matter . 2008,第19a20期

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4. Semiconductor to metallic transition of Bismuth Telluride with incorporation of Graphene- Its enhanced thermoelectric properties [C] . Sajal Biswas, Shilpa Maity, Krishanu Chatterjee International Conference on Computer, Electrical Communication Engineering . 2019

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6. The Thermoelectric Properties of n-Type Bismuth Telluride: Bismuth Selenide Alloys Bi2Te3−xSex [O] . Ian T. Witting, Francesco Ricci, Thomas C. Chasapis, 2020

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7. Synthesis, Physical Properties and Applications of Bisanthene-based Near Infrared Dyes and Semiconductors [O] . LI JINLING 2011

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Effect of Bi Additions upon the Physical Properties of Germanium Telluride Glassy Semiconductors

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