首页> 外文OA文献 >Minority Carrier Lifetime Measurement in Epitaxial Silicon Layers

【2h】

Minority Carrier Lifetime Measurement in Epitaxial Silicon Layers

机译：外延硅层中少数载流子寿命测量

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Tohru Hara; Fumio Tamura; Taira Kitamura;
展开▼
作者单位

展开▼
年度 1997
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Silicon Surface Passivation by Organic Monolayers: Minority Charge Carrier Lifetime Measurements and Kelvin Probe Investigations [J] . Alexander B. Sieval, Carolien L. Huisman, Axel Schonecker, The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical . 2003,第28期

机译：有机单层硅表面钝化：少数电荷载流子的寿命测量和开尔文探针研究
2. Carrier Recombination Lifetime Measurement in Silicon Epitaxial Layers Using Optically Excited MOS Capacitor Technique [J] . Elhami Khorasani Arash, Schroder Dieter K., Alford T.L. Electron Devices, IEEE Transactions on . 2015,第5期

机译：利用光激发MOS电容器技术测量硅外延层中载流子复合寿命
3. Silicon Nitride Barrier Layers Mitigate Minority-Carrier Lifetime Degradation in Silicon Wafers During Simulated MBE Growth of III–V Layers [J] . Zhang Chaomin, Ding Laura, Boccard Mathieu, Photovoltaics, IEEE Journal of . 2019,第2期

机译：氮化硅阻挡层在III–V层的MBE模拟生长过程中减轻了硅晶片中少数载流子的寿命退化。
4. DETERMINING THE MINORITY CARRIER LIFETIME IN EPITAXIAL SILICON LAYERS BY MICROWAVE- DETECTED PHOTOCONDUCTIVITY MEASUREMENTS [C] . D. Walter, P. Rosenits, F. Kopp, European Photovoltaic Solar Energy Conference and Exhibition . 2010

机译：通过微波检测的光电导性测量确定外延硅层中的少数载体寿命
5. Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers. [D] . Elhami Khorasani, Arash. 2013

机译：载流子寿命测量，用于表征超净p / p +硅外延薄层。
6. Minority Carrier Lifetime Measurements for Contactless Oxidation Process Characterization and Furnace Profiling [O] . Christian Bscheid, Christian R. Engst, Ignaz Eisele, 2019

机译：用于非接触氧化过程表征和炉分析的少数载流子寿命测量
7. Injection-dependent Minority Carrier Lifetime in Epitaxial Silicon Layers by Time-resolved Photoluminescence [O] . Parola Stéphanie, Daanoune Mehdi, Kaminski-Cachopo Anne, 2015

机译：通过时间分辨光致发光在外延硅层中注入依赖的少数载流子寿命
8. Measurement of minority carrier lifetime, mobility and diffusion length in heavily doped silicon [R] . Swirhun, S. E., Swanson, R. M. 1986

机译：重掺杂硅中少数载流子寿命，迁移率和扩散长度的测量

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

客服微信
服务号