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The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si-SiO Interface during Thermal Oxidation of Silicon

机译：硅氧化过程中氧化堆垛层错的生长及si-siO界面点缺陷的产生

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A. Miin-ron Lin; Robert W. Dutton; Dimitri A. Antoniadis; William A. Tiller;
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1. The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing [J] . Wu Y., Lucovsky G. IEEE Transactions on Electron Devices . 2000,第7期

机译：通过远程等离子体增强CVD和沉积后快速热退火制备的具有氮化的Si-SiO / sub 2 /界面的超薄氮化硅/氧化物堆叠栅极电介质的PMOSFET的性能和可靠性
2. Shrinkage and growth of oxidation stacking faults during thermal nitridation of silicon and oxidized silicon [J] . Journal of Applied Physics . 1982,第12期

机译：硅和氧化硅的热氮化过程中氧化堆叠缺陷的收缩和增长
3. Nucleation and growth of stacking faults in epitaxial silicon during thermal oxidation [J] . Hsieh C. M., Maher D. M. Journal of Applied Physics . 1973,第3期

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4. Extended 2D-defects of the surface silicon layer and the charged point defects generation processes in the silicon dioxide layer of Si-SiO_2 structures during thermal oxidation [C] . V.Y.Uritsky The Meeting of the Electrochemical Society . 2000

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5. A study of silicon/silicon dioxide interface roughness evolution during microwave electron cyclotron resonance plasma and thermal oxidation processes [D] . Zhao, Changyi 1997

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6. Three-Dimensional Heterostructured Reduced Graphene Oxide-Hexagonal Boron Nitride-Stacking Material for Silicone Thermal Grease with Enhanced Thermally Conductive Properties [O] . Weijie Liang, Xin Ge, Jianfang Ge, 2019

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7. Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface [O] . Yuusuke Hayashi, Ryu Hasunuma, Kikuo Yamabe 2011

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8. Defect-Related Dielectric Breakdown, Change Trapping, and Interface-State Generation of Gate Oxides Grown on Zone-Melting-Recrystallized Silicon-on-Insulator Films [R] . Lee, C. T., Chen, C. K. 1989

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The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si-SiO Interface during Thermal Oxidation of Silicon

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