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The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si using Pulsed Sputtering of a Hollow Cathode

机译：利用空心阴极脉冲溅射将3C-siC薄膜沉积到si的（111）和（110）面上

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J. Huguenin-love; N. T. Lauer; R. J. Soukup; N. J. Ianno; Š Kment; Z. Hubička;
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1. Deposition of hematite Fe_2O_3 thin film by DC pulsed magnetron and DC pulsed hollow cathode sputtering system [J] . Z. Hubicka, S. Kment, J. Olejnicek, Thin Solid Films . 2013,第deca31期

机译：直流脉冲磁控管和直流脉冲空心阴极溅射系统沉积赤铁矿Fe_2O_3薄膜
2. The electronic structure of tungsten oxide thin films prepared by pulsed cathodic arc deposition and plasma-assisted pulsed magnetron sputtering [J] . Field MR, McCulloch DG, Lim SNH, Journal of Physics. Condensed Matter . 2008,第17期

机译：脉冲阴极电弧沉积和等离子体辅助脉冲磁控溅射制备氧化钨薄膜的电子结构
3. Electrically insulating Al2O3 and SiO2 films for sensor and photovoltaic applications deposited by reactive pulse magnetron sputtering, hollow cathode arc activated deposition and magnetron-PECVD [J] . Frach P, Bartzsch H, Gloss D, Surface & Coatings Technology . 2008,第22a23期

机译：通过感应脉冲磁控溅射，空心阴极电弧激活沉积和磁控PECVD沉积的传感器和光伏应用电绝缘Al2O3和SiO2膜
4. The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si using Pulsed Sputtering of a Hollow Cathode [C] . J. Huguenin-Love, N. T. Lauer, R. J. Soukup, Silicon carbide and related materials 2009 . 2010

机译：使用空心阴极的脉冲溅射将3C-SiC薄膜沉积到Si的（111）和（110）面上
5. Growth and characterization of silicon carbide thin films using a nontraditional hollow cathode sputtering technique. [D] . Huguenin-Love, James. 2010

机译：使用非传统空心阴极溅射技术生长和表征碳化硅薄膜。
6. RF Sputtering Post-Annealing Treatment and Characterizations of ZnO (002) Thin Films on 3C-SiC (111)/Si (111) Substrates [O] . Visakh Valliyil Sasi, Abid Iqbal, Kien Chaik, 2017

机译：在3C-SiC（111）/ Si（111）基板上进行ZnO（002）薄膜的RF溅射退火后处理和表征
7. RF Sputtering, Post-Annealing Treatment and Characterizations of ZnO (002) Thin Films on 3C-SiC (111)/Si (111) Substrates [O] . Valliyil Sasi Visakh, Iqbal Abid, Chaik Kien, 2017

机译：在3C-SiC（111）/ Si（111）基板上进行ZnO（002）薄膜的RF溅射，退火后处理和表征

The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si using Pulsed Sputtering of a Hollow Cathode

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