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P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates

机译：采用高掺杂衬底的siC升华外延中的p型和n型掺杂

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Philip Hens; Mikael Syväjärvi; Felix Oehlschläger; Peter Wellmann;
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1. Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC [J] . S. A. Sakwe, R. Mueller, D. Queren, Physica Status Solidi. C, Conferences and critical reviews . 2006,第3期

机译：高n型掺杂与高p型掺杂6H-SiC本体生长过程中基面位错的演化和稳定性
2. Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement [J] . Hoang-Phuong Phan, Tuan-Khoa Nguyen, Toan Dinh, Physica status solidi . 2018,第24期

机译：用于机械传感器的高掺杂n型3C-SiC玻璃衬底上的应变效应和迁移率增强
3. Delineating Structural Defects in Highly Doped n-Type 4H-SiC Substrates Using a Combination of Thermal Diffusion and Molten KOH Etching [J] . Zehong Zhang, Ying Gao, Tangali Sudarshan Electrochemical and solid-state letters . 2004,第11期

机译：结合热扩散和熔融KOH刻蚀描绘高掺杂n型4H-SiC衬底中的结构缺陷
4. P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates [C] . Philip Hens, Mikael Syvaejaervi, Felix Oehlschlaeger, Silicon carbide and related materials 2008 . 2008

机译：使用高掺杂衬底在SiC升华外延中进行P型和n型掺杂
5. Growth, doping and characterization of GaN and AlGaN deposited on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy for microelectronic applications. [D] . Bremser, Michael D. 1997

机译：微金属应用中通过金属有机气相外延生长在6H-SiC（0001）衬底上的GaN和AlGaN的生长，掺杂和表征。
6. Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications [O] . Hung-Wei Li, Chih-Wei Chang -1

机译：用于热电应用的高掺杂n型SiGe晶体的压敏液相外延
7. P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire [O] . R. Armitage, Qing Yang, Eicke R. Weber 2003

机译：在R平面蓝宝石上的分子束外延生长的非极性A平面GaN的P-和N型掺杂

P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates

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