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FTIR STUDY OF POROUS LOW DIELECTRIC CONSTANT SIOC FILM UNDER VARIOUS POST-DEPOSITION CURING CONDITIONS

机译：不同后沉积固化条件下多孔低介电常数sIOC薄膜的FTIR研究

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A. Laghaa; M. Sardoa; A. Humbertb; M. Desboisb; N. Laurentc;
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1. A study on structural and electrical properties of low dielectric constant SiOC(H) thin films deposited via PECVD [J] . Navamathavan R., Nirmala R., Kim C.Y., The journal of physics and chemistry of solids . 2012,第5期

机译：PECVD法沉积低介电常数SiOC（H）薄膜的结构和电学性能研究
2. Study of Cu diffusion behavior in low dielectric constant SiOC(-H) films deposited by plasma-enhanced chemical vapor deposition [J] . Chi Kyu Choi, Heang Seuk Lee, R. Navamathavan, Thin Solid Films . 2010,第22期

机译：等离子增强化学气相沉积法在低介电常数SiOC（-H）薄膜中Cu扩散行为的研究
3. Ultraviolet irradiation effect on the properties of leakage current and dielectric breakdown of low-dielectric-constant SiOC(-H) films using comb capacitor structure [J] . Chang Young Kim, R. Navamathavan, Heang Seuk Lee, Thin Solid Films . 2011,第20期

机译：紫外线对梳状电容器结构低介电常数SiOC（-H）薄膜漏电流特性和介电击穿的影响
4. FTIR STUDY OF POROUS LOW DIELECTRIC CONSTANT SIOC FILM UNDER VARIOUS POST-DEPOSITION CURING CONDITIONS [C] . A. Lagha, M. Sardo, A. Humbert, Electrochemical Society . 2006

机译：各种沉积后固化条件下多孔低介电恒生SIOC膜的FTIR研究
5. Study of PECVD films containing flourine and carbon and diamond like carbon films for ultra low dielectric constant interlayer dielectric applications. [D] . Sundaram, Nandini Ganapathy. 2016

机译：用于超低介电常数层间电介质应用的含氟和碳的PECVD膜和类金刚石碳膜的研究。
6. Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices [O] . Marwa Mokni, Gianluigi Maggioni, Abdelkader Kahouli, 2019

机译：具有高介电常数和低损耗的纳米复合聚对二甲苯C薄膜可用于未来的有机电子设备
7. Structural and mechanical properties of low dielectric constant SiOC(-H) films using MTES/O2 deposited by PECVD [O] . R. Navamathavan, Anvar Zakirov, Hyun Seung Kim, 2015

机译：采用pECVD沉积的mTEs / O2制备低介电常数siOC（-H）薄膜的结构和力学性能

FTIR STUDY OF POROUS LOW DIELECTRIC CONSTANT SIOC FILM UNDER VARIOUS POST-DEPOSITION CURING CONDITIONS

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