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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

机译：热壁LpCVD生长4H-siC同质外延层中的原位硼和铝掺杂及其记忆效应

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Guosheng Sun; Yongmei Zhao; Liang Wang; Lei Wang;
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年度 2016
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入库时间 2022-08-20 20:58:47

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专利

1. High-quality homoepitaxial layers grown on 4H-SiC at a high growth rate by vertical LPCVD [J] . Wu Hailei, Sun Guosheng, Yang Ting, Journal of Semiconductors . 2011,第4期

机译：通过垂直LPCVD在4H-SiC上以高生长速率生长的高质量同质外延层
2. Structural and Electrical Properties of Unintentionally Doped 4H-SiC Epitaxial Layers-Grown by Hot-Wall CVD [J] . G.Wagner, B.Thomas, J.Doerschel, Journal of Electronic Materials . 2001,第3期

机译：热壁CVD生长的无意掺杂的4H-SiC外延层的结构和电性能
3. MOS Interface Characteristics of In-Situ Ge-doped 4H-SiC Homoepitaxial Layers [J] . Alberto Salinaro, Kassem Alassaad, Dethard Peters, Materials science forum . 2015,第期

机译：原位掺杂Ge的4H-SiC同质外延层的MOS界面特性
4. In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD [C] . Guosheng Sun, Yongmei Zhao, Liang Wang, Silicon Carbide and Related Materials 2007 . 2009

机译：热壁LPCVD生长4H-SiC同质外延层中的原位硼和铝掺杂及其记忆效应
5. Polytype stability, microstructural evolution, and impurities at the interface of homoepitaxial 4H-silicon carbide(1120) thin films grown via hot-wall chemical vapor deposition [D] . Bishop, Seann M. G. 2006

机译：通过热壁化学气相沉积法生长的同质外延4H-碳化硅（1120）薄膜的界面上的多型稳定性，微观结构演变和杂质
6. Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle [O] . Keiko Masumoto, Hirokuni Asamizu, Kentaro Tamura, 2014

机译：1°偏角的4H-SiC硅面同质外延层生长过程中3C夹杂物形成的抑制
7. Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition [O] . Guosheng Sun, Jin Ning, Quancheng Gong, 2016

机译：低压热壁化学气相沉积4H-siC外延层的同质外延生长及表征
8. Optical and Magnetic Resonance Studies of Mg-Doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy. [R] . Glaser, E. R., Murthy, M., Freitas, J. J., 2007

机译：分子束外延生长mg掺杂GaN同质外延层的光学和磁共振研究。

In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

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