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Development of Non-destructive In-house Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

机译：siC外延层中位错和堆垛层错的无损内部观测技术的发展

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I. Kamataa; H. Tsuchidab; T. Miyanagic; T. Nakamurad;
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1. Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers [J] . Nadeemullah A. Mahadik, Robert E. Stahlbush, M. G. Ancona, Applied Physics Letters . 2012,第4期

机译：高掺杂4H-SiC外延层中基面位错堆积缺陷的观察
2. Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress [J] . Konishi, Kazuya, Yamamoto, Journal of Applied Physics . 2013,第1期

机译：在高电流应力下从4H-SiC外延层的基底平面位错的堆叠断层扩展转换为穿线边缘位错
3. Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress [J] . Kazuya Konishi, Shigehisa Yamamoto, Shuhei Nakata, Journal of Applied Physics . 2013,第1期

机译：在高电流应力下从4H-SiC外延层的基底平面位错的堆叠断层扩展转换为穿线边缘位错
4. Development of Non-destructive In-house Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers [C] . I. Kamata, H. Tsuchida, T. Miyanagi, International Conference on Silicon Carbide and Related Materials; 20050918-23; Pittsburgh,PA(US) . 2006

机译：SiC外延层错位和堆垛层错无损内部观测技术的发展
5. Hydrogen effects on crystal dislocations and stacking-fault energy. [D] . Ferreira, Paulo Jorge. 1997

机译：氢对晶体位错和堆垛层错能量的影响。
6. Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis [O] . Viviana Scuderi, Cristiano Calabretta, Ruggero Anzalone, 2020

机译：通过室温μ-光致发光和μ-拉曼分析表征3C-SiC外延层截面中的4H和6H类堆积缺陷
7. Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers [O] . Thierry-Jebali, N., Kawahara, C., Miyazawa, T., 2015

机译：紫外光致发光成像光谱技术在厚，轻度n型掺杂，4°-off 4H-SiC外延层上的堆垛层错识别中的应用
8. Web Growth Used to Confine Screw Dislocations to Predetermined Lateral Positions in 4H-SiC Epilayers. [R] . Powell, J. Anthony, Neudeck, Philip G., Spry, David J., 2004

机译：网络生长用于将螺旋位错限制在4H-siC外延层中的预定横向位置。

Development of Non-destructive In-house Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

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