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Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

机译：具有超薄Ni-mILC多晶硅沟道层的薄膜晶体管的性能

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Zhonghe Jin Hoi;
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年度 1999
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1. Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers [J] . Zhonghe Jin, Kwok H.S. IEEE Electron Device Letters . 1999,第4期

机译：具有超薄Ni-MILC多晶硅沟道层的薄膜晶体管的性能
2. Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel [J] . Zer-Ming Lin, Horng-Chih Lin, Wei-Chen Chen, Applied Physicsletters . 2010,第7期

机译：洞悉具有超薄沟道的双栅极多晶硅薄膜晶体管的性能
3. High-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structure [J] . Chao-Lung Wang, I-Che Lee, Chun-Yu Wu, Thin Solid Films . 2013,第FEBa1期

机译：通过底栅结构上预图案化的沟道层的激光晶化制备的高性能多晶硅薄膜晶体管
4. Effect of Active Layer Thickness on Device Performance and Hot Carrier Instability in Metal Induced Crystallized Polycrystalline Silicon Thin-Film Transistors [C] . Zhendong Jiang, Meng Zhang, Xiaotong Ma, IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits . 2019

机译：有源层厚度对金属诱导的结晶多晶硅薄膜晶体管器件性能和热载流子不稳定性的影响
5. Metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology and application to flat-panel displays. [D] . Meng, Zhiguo. 2002

机译：金属诱导的单晶结晶多晶硅薄膜晶体管技术及其在平板显示器上的应用。
6. Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors [O] . Min-Gyu Shin, Kang-Hwan Bae, Hwan-Seok Jeong, 2020

机译：不同金属覆盖层对P沟道SnO薄膜晶体管电性能和稳定性的影响
7. Modelling localized charge-injection region of the p-channel low-temperature polycrystalline silicon thin-film transistor [O] . KwangHyun Choi, YoungHa Sohn, GeumJu Moon, 2018

机译：P沟道低温多晶硅薄膜晶体管的局部电荷喷射区域建模

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

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