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Buffer layers for highly ordered L1(0) FePt-oxide thin film granular media at reduced processing temperature

机译：缓冲层用于在降低的加工温度下高度有序的L1（0）Fept氧化物薄膜颗粒介质

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En Yang; David E. Laughlin; Jian-gang Zhu;
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年度 2010
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1. NCEP/NCAR再分析温度·位势高度和风速场资料在上对流层/下平流层的适用性评估(英文) [J] . 气象与环境研究：英文版 . 2010,第007期
2. Buffer Layers for Highly Ordered L1 FePt-Oxide Thin Film Granular Media at Reduced Processing Temperature [J] . Magnetics, IEEE Transactions on . 2010,第6期

机译：在降低的加工温度下用于高度有序的L1 FePt-氧化物薄膜薄膜介质的缓冲层
3. Bi-layered metal-oxide thin films processed at low-temperature for the encapsulation of highly stable organic photo-diode [J] . Ryu-ichi Satoh, Takkyun Ro, Chul-Joon Heo, Organic Electronics . 2017,第feba期

机译：低温处理的双层金属氧化物薄膜，用于封装高度稳定的有机光电二极管
4. Highly-efficient Cd-free CuInS_2 Thin-film Solar Cells and Mini-modules with Zn(S,O) Buffer Layers Prepared by an Alternative Chemical Bath Process [J] . A. ENNAOUI, M. BAR, J. KLAER Progress in photovoltaics . 2006,第6期

机译：通过替代化学浴工艺制备的具有Zn（S，O）缓冲层的高效无镉CuInS_2薄膜太阳能电池和微型组件
5. Electrical properties of high quality MBE-grown GaN thin films on intermediate-temperature buffer layers [C] . Fong, W.K., Zhu, Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong . 2001

机译：中温缓冲层上高质量MBE生长的GaN薄膜的电性能
6. Alternative thin-film buffer layer materials for lithium-ion conductors in highly reducing environments. [D] . Sajja, Abhilash. 2013

机译：在高度还原的环境中，用于锂离子导体的替代薄膜缓冲层材料。
7. Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers [O] . John P George, Jeroen Beeckman, Wouter Woestenborghs, 2013

机译：通过薄中间缓冲层在硅上沉积的优先取向BaTiO3薄膜
8. Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy [O] . Lu LW, Fong WK, Zhu CF, 2002

机译：用分子束外延研究在中温缓冲层上生长的GaN薄膜
9. Assessment of Chemical Solution Synthesis and Properties of Gd2Zr2O7 Thin Films as Buffer Layers for Second-Generation High-Temperature Superconductor Wires (Postprint). [R] . Aytug, T., Paranthaman, M., Leonard, K. J., 2012

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Buffer layers for highly ordered L1(0) FePt-oxide thin film granular media at reduced processing temperature

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