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Quantum Interference Effects in Highly Doped n-ZnSe Epitaxy Layers Grown by MBE

机译：mBE生长的高掺杂n-Znse外延层的量子干涉效应

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H. Shao; J. Gerschütz; S. Scholl; H. Schäfer; B. Jobst; D. Hommel; G. Landwehr;
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年度 2007
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1. Quantum interference effects in highly doped n-ZnSe epitaxy layers grown by MBE [J] . Shao H., Scholl S., Schafer H., Physica status solidi, B. Basic research . 1998,第2期

机译：MBE生长的高掺杂n-ZnSe外延层中的量子干涉效应
2. Nonalloyed and in situ Ohmic contacts to highly doped n‐type GaAs layers grown by molecular beam epitaxy (MBE) for field‐effect transistors [J] . Journal of Applied Physics . 1979,第2期

机译：非合金和原位欧姆接触通过分子束外延（MBE）生长的用于场效应晶体管的高掺杂n型GaAs层
3. Crystal lattice defects in MBE grown Si layers highly doped with Er [J] . N. D. Zakharov, P. Werner, V. I. Vdovin, Physica Status Solidi. A, Applications and Materials Science . 2008,第2期

机译：高掺Er的MBE生长的Si层中的晶格缺陷
4. Optimization of extremely highly p-doped In/sub 0.53/Ga/sub 0.47/As:Be contact layers grown by MBE [C] . Passenberg, W., Harde, Indium Phosphide and Related Materials, 1990. Second International Conference. . 1990

机译：MBE生长的极高p掺杂In / sub 0.53 / Ga / sub 0.47 / As的优化：是接触层
5. Photoluminescence and Electrical Properties of Impurity-doped ZnSe Layers Grown by Molecular Beam Epitaxy利用統計を見る [D] . Ohkawa Kazuhiro 1992

机译：分子束外延生长掺杂杂质的ZnSe层的光致发光和电学性质
6. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

机译：分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质：热退火的影响
7. Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy [O] . Shiozaki, Nanako, Sato, Taketomo, Hasegawa, Hideki 2005

机译：表面状态和基于Si中间层的表面钝化对选择性分子束外延生长的GaAs量子线的影响
8. Integrated Optoelectronic Circuits Utilizing InGaAsP Grown by Molecular Beam Epitaxy (Erbium Doping of MBE GaAs) [R] . Meeks, E. L. 1987

机译：利用分子束外延生长InGaasp的集成光电子电路（mBE Gaas的掺铒）

Quantum Interference Effects in Highly Doped n-ZnSe Epitaxy Layers Grown by MBE

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