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Jack LeeHafnium Dioxide Gate Dielectrics, Metal Gate Electrodes, and Phenomena Occurring at their Interfaces

机译：Jack LeeHafnium Dioxide栅极电介质，金属栅极电极和在其界面处发生的现象

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James Kenyon; Schaeffer Iii; John G. Ekerdt; Bruce White; Sanjay Banerjee; Kenneth Ralls;
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2. An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications [J] . Son SY, Kumar P, Lee JS, Electrochemical and solid-state letters . 2008,第4期

机译：用于双金属栅应用的Hf-硅酸盐电介质上的Ti基金属栅电极的评估
3. Aggressively scaled ultra thin undoped HfO/sub 2/ gate dielectric (EOT<0.7 nm) with TaN gate electrode using engineered interface layer [J] . Changhwan Choi, Chang-Yong Kang, Se Jong Rhee, IEEE Electron Device Letters . 2005,第7期

机译：使用工程界面层和TaN栅电极积极地缩放超薄无掺杂HfO / sub 2 /栅介质（EOT <0.7 nm）
4. Phenomena of Dielectric Capping Layer Insertion into High-κ Metal Gate Stacks in Gate-First/Gate-Last Integration [C] . H. Jagannathan, P. Jamison, V. K. Paruchuri Dielectric materials and metals for nanoelectronics and photonics 10 . 2012

机译：在先栅极/后栅极集成中将介电帽盖层插入高κ金属栅极堆叠中的现象
5. Interface engineering and reliability characteristics of hafnium dioxide with poly silicon gate and dual metal (ruthenium-tantalum alloy, ruthenium) gate electrode for beyond 65 nm technology. [D] . Kim, Young-Hee. 2004

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机译：表征金属掺杂酞菁薄膜的灵敏度，选择性和可逆性，与交叉栅极电极场效应晶体管（IGEFET）一起检测有机磷化合物和二氧化氮

Jack LeeHafnium Dioxide Gate Dielectrics, Metal Gate Electrodes, and Phenomena Occurring at their Interfaces

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