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Deep Cryogenic Noise and Electrical Characterization of the Complementary Heterojunction Field-Effect Transistor (CHFET)

机译：互补异质结场效应晶体管（CHFET）的深层低温噪声和电特性

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Thomas J. Cunningham; Russell C. Gee; Eric R. Fossum; Senior Member; Steven M. Baier;
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年度 2014
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1. Deep cryogenic noise and electrical characterization of the complementary heterojunction field-effect transistor (CHFET) [J] . Cunningham T.J., Gee R.C. IEEE Transactions on Electron Devices . 1994,第6期

机译：互补异质结场效应晶体管（CHFET）的深低温噪声和电特性
2. Dynamic and low-frequency noise characterization of Si-Ge heterojunction-bipolar transistors at cryogenic temperatures [J] . Arnaboldi C., Boella G., Pessina G. IEEE Transactions on Nuclear Science . 2003,第4期

机译：低温下Si-Ge异质结双极晶体管的动态和低频噪声表征
3. Broad spectral response photosensitive organic field-effect transistors realized by the hybrid planar-bulk heterojunction composed of three molecules with complementary optical absorption [J] . Yingquan Peng, Fobao Huang, Jianping Zhang, Organic Electronics . 2017,第APRa期

机译：由具有互补光吸收的三个分子组成的混合平面本体异质结实现的广谱响应光敏有机场效应晶体管
4. Noise and current-voltage characterization of complementary heterojunction field-effect transistor structures below 8 K [C] . Thomas J. Cunningham, Jet Propulsion Lab., Pasadena, Conference on infrared readout electronics . 1992

机译：低于8 K的互补异质结场效应晶体管结构的噪声和电流电压特性
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Achievement of High-Response Organic Field-Effect Transistor NO2 Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction [O] . Shijiao Han, Jiang Cheng, Huidong Fan, 2016

机译：ZnO / PMMA杂化介质与CuPc /并五苯异质结的协同效应实现高响应有机场效应晶体管NO2传感器
7. Field-Effect Transistors: Contact-Engineered Electrical Properties of MoS2 Field-Effect Transistors via Selectively Deposited Thiol-Molecules (Adv. Mater. 18/2018) [O] . Kyungjune Cho, Jinsu Pak, Jae-Keun Kim, 2018

机译：现场效应晶体管：通过选择性地沉积硫醇分子（ADV。Mater.18 / 2018）通过选择性地沉积MOS2场效应晶体管的接触式电气性能
8. Low Frequency and Microwave Characterization of Submicron-Gate In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As Heterojunction Metal-Semiconductor Field-Effect Transistors Grown by Molecular-Beam Epitaxy. [R] . Eastman, L. F., Kuang, J. B., Tasker, P. J., 1989

机译：亚微米栅极In（0.52）al（0.48）as / In（0.53）Ga（0.47）as / In（0.52）al（0.48）的低频和微波表征作为分子生长的异质结金属半导体场效应晶体管光束外延。

Deep Cryogenic Noise and Electrical Characterization of the Complementary Heterojunction Field-Effect Transistor (CHFET)

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