首页> 外文OA文献 >Selective Electrochemical Profiling of Threading Dislocations in Mismatched InGaAs/GaAs Heteroepitaxial Systems

【2h】

Selective Electrochemical Profiling of Threading Dislocations in Mismatched InGaAs/GaAs Heteroepitaxial Systems

机译：不匹配InGaas / Gaas异质外延系统中穿线位错的选择性电化学分析

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
A. Nemcsics; Aâ Nemcsics; F. Riesz; L. Dobos;
展开▼
作者单位

展开▼
年度 1999
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs [J] . Yu.B. Bolkhovityanova* A.S. Deryabina A.K. Gutakovskiia amp, L.V. Sokolova Philosophical Magazine Letters . 2011,第7期

机译：交叉滑移在异质外延体系GeSi-on-Si（001）和Ge-on-InGaAs / GaAs中边缘位错形成中的作用
2. Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs [J] . Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii Philosophical Magazine Letters . 2011,第7a8期

机译：交叉滑移在异质外延体系GeSi-on-Si（001）和Ge-on-InGaAs / GaAs中边缘位错形成中的作用
3. Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p-i-n Structures on the Relaxation time of Nonequilibrium Carriers [J] . Sobolev M. M., Soldatenkov F. Yu. Semiconductors . 2018,第2期

机译：脱位相关的深度水平在异轴肌腱腹腔/ GaAs和Gaassb / GaAs P-I-N结构上的效果对非QuibiBribium载体的弛豫时间
4. A Novel Approach for the Complete Removal of Threading Dislocations from Mismatched Heteroepitaxial Layers [C] . A, J. E. Ayers, F. C. Jain, Symposium on influences of interface and dislocation behavior on microstructure evolution . 2001

机译：一种新的方法，用于完全去除非匹配异质轴层的线程脱位
5. Strategies of reducing threading dislocation density in heteroepitaxial thin films. [D] . Hu, Chimin. 1998

机译：降低异质外延薄膜中的螺纹位错密度的策略。
6. Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows [O] . Viktor Shamakhov, Dmitriy Nikolaev, Sergey Slipchenko, 2021

机译：在超宽窗口中与InGaAs QWS异质结构的选择性区域外延的表面纳米结构
7. Threading Dislocations in InGaAs CaP Layers with InGaAs Graded Layers Grown on Si Substrates [O] . Takano, Yasushi, Kobayashi, Kazunobu, Uranishi, Taiju, 2010

机译：在Si衬底上生长InGaAs梯度层的InGaAs CaP层中的螺纹位错

Selective Electrochemical Profiling of Threading Dislocations in Mismatched InGaAs/GaAs Heteroepitaxial Systems

著录项

引文网络

相似文献

相关主题

期刊订阅