首页> 外文OA文献 >Total Power Optimization by Simultaneous Dual-Vt Allocation and Device Sizing in High Performance Microprocessors

【2h】

Total Power Optimization by Simultaneous Dual-Vt Allocation and Device Sizing in High Performance Microprocessors

机译：通过在高性能微处理器中同时实现双Vt分配和器件尺寸来实现总功率优化

页面导航

著录项
相似文献
相关主题

著录项

作者
Tanay Karnik; Yibin Ye; James Tschanz; Liqiong Wei; Steven Burns; Venkatesh Govindarajulu; Vivek De; Shekhar Borkar;
展开▼
作者单位

展开▼
年度 2002
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Reduced-voltage power/performance optimization of the 3.6-volt PowerPC 601 Microprocessor [J] . IBM Journal of Research and Development . 1995,第1期

机译：3.6伏PowerPC 601微处理器的降压功率/性能优化
2. Simultaneous driver and wire sizing for performance and poweroptimization [J] . Cong J., Cheng-Kok Koh IEEE transactions on very large scale integration (VLSI) systems . 1994,第4期

机译：同时调整驱动器和导线尺寸，以实现性能和功率优化
3. Simultaneous driver and wire sizing for performance and power optimization [J] . Cong J., Cheng-Kok Koh IEEE transactions on very large scale integration (VLSI) systems . 1994,第4期

机译：同时调整驱动器和导线尺寸，以实现性能和功率优化
4. Total power optimization by simultaneous dual-Vt allocation and device sizing in high performance microprocessors [C] . Tanay Karnik, Yibin Ye, James Tschanz, Conference on Design automation . 2002

机译：通过在高性能微处理器中同时进行双Vt分配和设备选型来优化总功率
5. Optimization of power system performance using FACTS devices. [D] . del Valle, Yamille E. 2009

机译：使用FACTS设备优化电力系统性能。
6. Reducing Power and Cycle Requirement for FFT of ECG Signals through Low Level Arithmetic Optimizations for Cardiac Implantable Devices [O] . Safwat Mostafa, Eugene John -1

机译：通过针对心脏植入设备的低级算术优化来降低ECG信号FFT的功耗和周期要求
7. Total Power Optimization through Simultaneously Multiple-VDD Multiple-VTH Assignment and Device Sizing with Stack Forcing [O] . W. Hung, Y. Xie, N. Vijaykrishnan, 2004

机译：通过同时多VDD多VTH分配和具有堆栈强制功能的器件选型来优化总功耗
8. SiC Discrete Power Devices-Analysis and Optimization of the Planar 6H-SiCACCUFET; A Planar Lateral Channel SiC Vertical High Power JFET; The Planar Lateral Channel MESFET-A New SiC Vertical Power Device; Growth via Hot Wall Chemical Vapor Deposition Chara [R] . Davis, R. F., Baliga, B. J., Tomozawa, H. S., 1998

机译：siC离散功率器件 - 平面6H-siCaCCUFET的分析和优化;平面横向沟道siC垂直高功率JFET;平面横向通道mEsFET-a新型siC垂直功率器件;通过热壁化学气相沉积Chara生长

Total Power Optimization by Simultaneous Dual-Vt Allocation and Device Sizing in High Performance Microprocessors

著录项

相似文献

相关主题

期刊订阅