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Current-Voltage Characteristics of High Current Density Silicon Esaki Diodes Grown by Molecular Beam Epitaxy and the Influence of Thermal Annealing

机译：分子束外延生长高电流密度硅Esaki二极管的电流 - 电压特性及热退火的影响

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Michael W. Dashiell; Ralph T. Troeger; Sean L. Rommel; Thomas N. Adam; Paul R. Berger; C. Guedj; James Kolodzey; Senior Member; Alan C. Seabaugh; R. Lake;
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1. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing [J] . Dashiell M.W., Troeger R.T. IEEE Transactions on Electron Devices . 2000,第9期

机译：分子束外延生长高电流密度硅Esaki二极管的电流电压特性及热退火的影响
2. Infrared absorption and current-voltage characteristic of GaAs/ AlGaAs multiple quantum wells on GaAs (1 1 1)A substrate grown by solid source molecular beam epitaxy [J] . H. Li, T. Mei, D.H. Zhang, Journal of Crystal Growth . 2006,第1期

机译：固体源分子束外延生长在GaAs（1 1 1）A衬底上的GaAs / AlGaAs多量子阱的红外吸收和电流-电压特性
3. Isothermal current-voltage characteristics of high-voltage silicon carbide rectifier p-i-n diodes at very high current densities [J] . M E Levinshtein, T T Mnatsakanov, P A Ivanov, Semiconductor science and technology . 2007,第3期

机译：高电流密度下高压碳化硅整流器P-I-N二极管的等温电流-电压特性
4. Growth and characterization of low threshold-current-density II-VI blue-green laser diodes grown by molecular beam epitaxy [C] . Marshall, T., Gaines, . 1994

机译：通过分子束外延生长的低阈值电流密度II-VI蓝绿色激光二极管的生长和表征
5. Investigation and Engineering of the Homogeneity and Current Injection of Molecular Beam Epitaxy Grown III-Nitride Nanowire Ultraviolet Light Emitting Diodes [D] . May, Brelon J. 2019

机译：分子束外延生长的III族氮化物纳米线紫外发光二极管的均相和电流注入研究与工程
6. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

机译：分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质：热退火的影响
7. Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy [O] . Zhao H, Xu YQ, Ni HQ, 2006

机译：分子束外延生长的GaIn（N）（Sb）As / GaAs量子阱上快速热退火的特征
8. Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers. [R] . G. Brill M. V. Rao P. S. Wijewarnasuriya S. Farrell Y. Chen 2010

机译：分子束外延生长HgCdTe / si层的非原位热循环退火。

Current-Voltage Characteristics of High Current Density Silicon Esaki Diodes Grown by Molecular Beam Epitaxy and the Influence of Thermal Annealing

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