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Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel

机译：具有siGe / si异质结构通道的纳米级超薄体绝缘体上硅p-mOsFET

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Yee Chia Yeo; Student Member; Vivek Subramanian; Jakub Kedzierski; Peiqi Xuan; Tsu-jae King; Jeffrey Bokor; Chenming Hu;
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1. FABRICATION OF STRAINED-Si CHANNEL P-MOSFET's ON ULTRA-THIN SiGe VIRTUAL SUBSTRATES [J] . 电子科学学刊（英文版） . 2006,第002期
2. Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel [J] . Yee Chia Yee, Subramanian V. IEEE Electron Device Letters . 2000,第4期

机译：具有SiGe / Si异质结构沟道的纳米级超薄绝缘体上硅P-MOSFET
3. Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI) [J] . Zhiyuan Cheng, Jongwan Jung, Minjoo L Lee, Semiconductor science and technology . 2004,第5期

机译：在绝缘体上锗化硅（SGOI）上制造的应变硅/应变硅锗异质结构p-MOSFET中的空穴迁移率增强
4. A continuous analytic Ⅰ-Ⅴ model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach [J] . Jin He, Mansun Chan, Ganggang Zhang, Semiconductor science and technology . 2006,第3期

机译：基于载流子的长沟道无掺杂超薄型绝缘体上硅（UTB-SOI）MOSFET的连续分析Ⅰ-Ⅴ模型
5. Si/SiGe Heterostructure p-MOSFET with Triangular Ge Channel Profiles [C] . Voinigescu S. P., Salama C. A. T., Noel J. -P., Solid State Device Research Conference, 1994. ESSDERC '94 . 1994

机译：具有三角形Ge通道轮廓的Si / SiGe异质结构p-MOSFET
6. Analysis and modeling of parasitic effects in advanced silicon-on-insulator CMOS technologies, including nonclassical ultra-thin-body transistors. [D] . Yang, Ji-Woon. 2004

机译：包括非经典超薄晶体管在内的高级绝缘体上CMOS技术的寄生效应分析和建模。
7. A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step [O] . Wei-Ting Lai, Kuo-Ching Yang, Ting-Chia Hsu, 2015

机译：在单个制造步骤中生成自对准SiO2 / Ge / SiO2 / SiGe栅堆叠异质结构的独特方法
8. Strained SiGe-channel p-MOSFETs : impact of heterostructure design and process technology [O] . Ní Chléirigh Cáit 2007

机译：应变siGe沟道p-mOsFET：异质结构设计和工艺技术的影响

Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel

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