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Wavelength Invariant Bi/In Thermal Resist As A Si Anisotropic Etch Masking Layer And Direct Write Photomask Material

机译：波长不变的Bi / In热阻抗作为si各向异性蚀刻掩模层和直接写入光掩模材料

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Glenn Chapman; Yuqiang Tu; Jun Peng;
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年度 2013
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1. The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N₂ Plasma [J] . Robert Andok, Anna Ben?urová, Pavol Nemec, Journal of Electrical Engineering . 2013,第6期

机译：EBDW光刻中的AZ 5214E抗蚀剂及其在N _{2 等离子体中刻蚀薄Ag层时用作RIE刻蚀掩模}
2. Resist Mask and Nanowires Formation by Direct-Write Electron Beam Lithography [J] . M. Nuzaihan, U. HashimT. Nazwa, and Tijjani Adam Journal of applied sciences research . 2013,第3期

机译：直接写入电子束光刻技术的抗蚀剂掩模和纳米线形成
3. Development of Process Recipes for Maximum Mask Etch Selectivity and Maximum Etch Rate Having Vertical Sidewalls for Deep, Highly-Anisotropic Inductively-Coupled Plasma (ICP) Etching of Fused Silica [J] . Pedersen Michael, Huff Michael ECS Journal of Solid State Science and Technology . 2017,第9期

机译：开发用于最大掩模蚀刻的过程配方和具有垂直侧壁的最大蚀刻速率，用于深度，高度各向异性电感耦合等离子体（ICP）蚀刻熔融二氧化硅的蚀刻
4. Wavelength Invariant Bi/In Thermal Resist As A Si Anisotropic Etch Masking Layer And Direct Write Photomask Material [C] . Glenn Chapman, Yuqiang Tu, Jun Peng Advances in Resist Technology and Processing XX . 2003

机译：波长不变的Bi / In热阻作为Si各向异性蚀刻掩模层和直接写入光掩模材料
5. Computer-aided mask layout synthesis for anisotropic etch photolithography. [D] . Long, Mark K. 1999

机译：用于各向异性蚀刻光刻的计算机辅助掩模版图合成。
6. Physical electro-thermal model of resistive switching in bi-layered resistance-change memory [O] . Sungho Kim, Sae-Jin Kim, Kyung Min Kim, -1

机译：双层电阻变化存储器中电阻切换的物理电热模型
7. Single Step Direct-Write Photomask Made From Bimetallic Bi/In Thermal Resist [O] . Glenn Chapman, Yuqiang Tu 2013

机译：由双金属Bi / In热电阻制成的单步直写光掩模

Wavelength Invariant Bi/In Thermal Resist As A Si Anisotropic Etch Masking Layer And Direct Write Photomask Material

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