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Hot-Carrier Reliability of P-MOSFET with Ultra-Thin Silicon Nitride Gate Dielectric

机译：具有超薄氮化硅栅介质的P-MOSFET的热载流子可靠性

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Igor Polishchuk; Yee-chia Yeo; Qiang Lu; Tsu-jae King; Chenming Hu;
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1. The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing [J] . Wu Y., Lucovsky G. IEEE Transactions on Electron Devices . 2000,第7期

机译：通过远程等离子体增强CVD和沉积后快速热退火制备的具有氮化的Si-SiO / sub 2 /界面的超薄氮化硅/氧化物堆叠栅极电介质的PMOSFET的性能和可靠性
2. Effect of Ultrathin Silicon Oxide Film for Enhanced Performance and Reliability of Metal-Induced Laterally Crystallized Thin-Film Transistors Using Silicon Nitride as a Gate Dielectric [J] . Chae Hee Jae, Kim Hyung Yoon, Lee Sol Kyu, ECS Journal of Solid State Science and Technology . 2016,第12期

机译：超薄氧化硅膜对以氮化硅为栅介质的金属诱导的横向结晶薄膜晶体管的性能和可靠性的影响
3. The use of ultrathin reoxidized nitrided gate oxide for suppression of boron penetration in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs [J] . Lo G.Q., Kwong D.-L. IEEE Electron Device Letters . 1991,第4期

机译：使用超薄再氧化氮化栅氧化物抑制BF / sub 2 // sup +/-注入的多晶硅栅p-MOSFET中的硼渗透
4. Hot-carrier reliability of p-MOSFET with ultra-thin silicon nitride gate dielectric [C] . Polishchuk I., Yee-Chia Yeo, Qiang Lu, Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International . 2001

机译：具有超薄氮化硅栅极电介质的p-MOSFET的热载流子可靠性
5. Compact gate capacitance and gate current modeling of ultra-thin (EOT ~ 1 nm and below) silicon dioxide and high-kappa gate dielectrics. [D] . Li, Fei. 2006

机译：紧凑的栅极电容和栅极电流建模，可用于超薄（EOT〜1 nm及以下）二氧化硅和高kappa栅极电介质。
6. Top-Gated Graphene Nanoribbon Transistors with Ultra-Thin High-k Dielectrics [O] . Lei Liao, Jingwei Bai, Rui Cheng, -1

机译：顶栅石墨烯纳米带晶体管具有超薄高k电介质
7. Intrinsic Reliability Projections for a Thin JVD Silicon Nitride Gate Dielectric in P-MOSFET [O] . Igor Polishchuk, Student Member, Qiang Lu, 2015

机译：p-mOsFET中薄JVD氮化硅栅介质的本征可靠性预测
8. Effect of Synchrotron X-ray Radiation on the Channel Hot-Carrier Reliability ofReoxidized Nitrided Silicon Dioxide [R] . Dunn, G. J. 1991

机译：同步辐射X射线辐射对再氧化氮化二氧化硅通道热载流子可靠性的影响

Hot-Carrier Reliability of P-MOSFET with Ultra-Thin Silicon Nitride Gate Dielectric

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