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Overview of Complementary GaAs Technology for HighSpeed VLSI Circuits

机译：高速VLSI电路的互补式GaAs技术概述

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Richard B. Brown; Bruce Bernhardt; Mike Lamacchia; Jon Abrokwah; Phiroze N. Parakh; Todd D. Basso; Spencer M. Gold; Sean Stetson; Claude R. Gauthier; David Foster; Brian Crawforth; Timothy Mcquire; Karem Sakallah; Ronald J. Lomax; Trevor N. Mudge;
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年度 1997
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1. Overview of complementary GaAs technology for high-speed VLSI circuits [J] . Brown R.B., Bernhardt B. IEEE transactions on very large scale integration (VLSI) systems . 1998,第1期

机译：高速VLSI电路的互补式GaAs技术概述
2. Overview of complementary GaAs technology for high-speed VLSIcircuits [J] . Brown R.B., Bernhardt B., LaMacchia M., IEEE transactions on very large scale integration (VLSI) systems . 1998,第1期

机译：高速VLSI电路的互补式GaAs技术概述
3. Monolithic integration of SEEDs and VLSI GaAs circuits by epitaxy on electronics [J] . Wang H., Luo J. IEEE Photonics Technology Letters . 1997,第5期

机译：通过电子学上的外延，将SEED和VLSI GaAs电路单片集成
4. 0.7 micron gate length complementary Al/sub 0.75/Ga/sub 0.25/As/In/sub 0.25/Ga/sub 0.75/As/GaAs HIGFET technology for high speed/low power digital circuits [C] . Grider, D.E., Ruden, . 1992

机译：0.7微米栅极长度互补Al / sub 0.75 / Ga / sub 0.25 / As / In / sub 0.25 / Ga / sub 0.75 / As / GaAs HIGFET技术用于高速/低功率数字电路
5. Design automation for high performance complementary metal oxide-semiconductor VLSI circuits [D] . Chen, Hau-Yung 1989

机译：高性能互补金属氧化物半导体VLSI电路的设计自动化
6. Erratum to: Implantable neurotechnologies: bidirectional neuralinterfaces—applications and VLSI circuit implementations [O] . Elliot Greenwald, Matthew R. Masters, Nitish V. Thakor -1

机译：勘误至：植入式神经技术：双向神经接口—应用程序和VLSI电路实现
7. Computer-generated hologram etched in GaAs for optical interconnection of VLSI circuits [O] . C.D. Carey, D.R. Selviah, S.K. Lee, 1992

机译：在GaAs中蚀刻VLSI电路的光学互连的计算机生成的全息图
8. New dynamic FET logic and serial memory circuits for VLSI GaAs technology [R] . Eldin, A. G. 1991

机译：用于VLsI Gaas技术的新型动态FET逻辑和串行存储器电路

Overview of Complementary GaAs Technology for HighSpeed VLSI Circuits

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