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Influence of Doping Concentration and Ambient Temperature on the Cross-Plane Seebeck Coefficient of InGaAs/InAlAs superlattices

机译：掺杂浓度和环境温度对InGaAs / InAlAs超晶格横断面塞贝克系数的影响

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Yan Zhang; Daryoosh Vashaee; Rajeev Singh; Ali Shakouri; Gehong Zeng; Yi-jen Chiu;
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2. Cross-plane thermoelectric Seebeck coefficients in nanoscale Al2O3/ZnO superlattice films [J] . Yoon Yo-Seop, Lee Won-Yong, Park No-Won, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2019,第6期

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3. Cross-plane Seebeck coefficient and Lorenz number in superlattices [J] . Z. Bian, M. Zebarjadi, R. Singh, Physical review. B, Condensed Matter And Materials Physics . 2007,第20期

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4. Influence of Doping Concentration and Ambient Temperature on the Cross-Plane Seebeck Coefficient of InGaAs/InAlAs superlattices [C] . Yan Zhang, Daryoosh Vashaee, Rajeev Singh, Symposium on Thermoelectric Materials 2003: Research and Applications; 20031201-20031203; Boston,MA; US . 2003

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Influence of Doping Concentration and Ambient Temperature on the Cross-Plane Seebeck Coefficient of InGaAs/InAlAs superlattices

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