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Investigation of the Annealing Behaviour of Implanted Nitrogen in n-type InP

机译：n型InP中注入氮的退火行为研究

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Likonen Vkevinen Ahlgren; J. Likonen; K. Vkevinen; T. Ahlgren; J. Risnen; E. Rauhala; J. Keinonen;
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年度 2007
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1. Investigation on deep level defects in rapid thermal annealed undoped n-type InP [J] . V. Janardhanam, A. Ashok Kumar, V. Rajagopal Reddy, Journal of materials science . 2010,第3期

机译：快速热退火非掺杂n型InP的深层缺陷研究
2. Investigation on deep level defects in rapid thermal annealed undoped n-type InP [J] . V. Janardhanam, A. Ashok Kumar, V. Rajagopal Reddy, Journal of Materials Science: Materials in Electronics . 2010,第3期

机译：快速热退火非掺杂n型InP的深层缺陷研究
3. Electrical and optical characterization of a Zn-implanted InP laser annealed in a nitrogen atmosphere [J] . G Zollo, G Leahu Semiconductor science and technology . 2007,第3期

机译：在氮气氛中退火的注入锌的InP激光器的电和光学特性
4. Implant isolation of both n-type InP and InGaAs by iron irradiation: effect of post-implant annealing temperature [C] . Too P., Ahmed S., Jakiela R., Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on . 2003

机译：铁辐射对n型InP和InGaAs的植入物隔离：植入后退火温度的影响
5. AUGER ELECTRON AND X-RAY PHOTOELECTRON SPECTROSCOPIC INVESTIGATION OF ENCAPSULATED ANNEALING OF III-V COMPOUND SEMICONDUCTORS (PLASMA DEPOSITION, SILICON-NITRIDE, ION IMPLANTATION). [D] . VALCO, GEORGE JOHN. 1986

机译：对III-V族化合物半导体的等离子退火（等离子沉积，硅氮化物，离子注入）进行俄歇电子和X射线光电子能谱研究。
6. Nanoscale investigation of enhanced electron field emission for silver ion implanted/post-annealed ultrananocrystalline diamond films [O] . Kalpataru Panda, Jeong Jin Hyeok, Jeong Young Park, -1

机译：银离子注入/退火后的超纳米晶金刚石薄膜增强电子发射的纳米尺度研究
7. Annealing behaviour of high-dose-implanted nitrogen in InP [O] . Likonen Vakeva Inen 2007

机译：Inp中高剂量注入氮的退火行为

Investigation of the Annealing Behaviour of Implanted Nitrogen in n-type InP

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