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Breakdown in Millimeter-Wave Power InP HEMT’s: A Comparison with GaAs PHEMT’s

机译：毫米波功率InP HEMT的细分：与GaAs PHEMT的比较

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1. Breakdown in millimeter-wave power InP HEMTs: a comparison with GaAs PHEMT's [J] . del Alamo J.A., Somerville M.H. IEEE Journal of Solid-State Circuits . 1999,第9期

机译：毫米波功率InP HEMT的细分：与GaAs PHEMT的比较
2. Breakdown in millimeter-wave power InP HEMTs: a comparison withGaAs PHEMT's [J] . del Alamo J.A., Somerville M.H. IEEE Journal of Solid-State Circuits . 1999,第9期

机译：毫米波功率InP HEMT的细分：与GaAs PHEMT的比较
3. Stress-Related Hydrogen Degradation of 0.1-μm InP HEMTs and GaAs PHEMTs [J] . Roxann R. Blanchard, J. A. del Alamo IEEE Transactions on Electron Devices . 2006,第6期

机译：0.1μmInP HEMT和GaAs PHEMT的应力相关氢降解
4. Breakdown in millimeter-wave power InP HEMTs: a comparison with PHEMTs [C] . del Alamo, J.A., Somerville, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual . 1998

机译：毫米波功率InP HEMT的细分：与PHEMT的比较
5. Simulation and Comparison of High Speed GaAsSb-InP and InGaAs-InP Uni-Traveling-Carrier Photodiodes [D] . Guneroglu, Ugur 2019

机译：高速GaAsSb-InP和InGaAs-InP单向载流子光电二极管的仿真与比较
6. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric [O] . Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, 2016

机译：使用液相沉积的TiO2作为栅介质的AlGaAs / InGaAs PHEMT的亚阈值特性和闪烁噪声降低
7. A model for hydrogen-induced piezoelectric effect in InP HEMTs and GaAs PHEMTs [O] . S.D. Mertens, J.A. del Alamo 2002

机译：INP HEMTS和GAAS PHEMTS中氢诱导压电效应的模型
8. Impact of Low Temperature Materials on the Breakdown and Noise Properties of GaAsand InP Based Hemt's and FET's [R] . Mishra, U. K. 1994

机译：低温材料对Gaas和Inp基Hemt和FET的击穿和噪声特性的影响

Breakdown in Millimeter-Wave Power InP HEMT’s: A Comparison with GaAs PHEMT’s

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