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Semi-analytical Model for Schottky-barrier Carbon Nanotube and Graphene Nanoribbon Transistors

机译：肖特基势垒碳纳米管和石墨烯纳米带晶体管的半解析模型

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Xuebei Yang; Gianluca Fiori; Kartik Mohanram;
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年度 2013
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1. Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths [J] . Ahmed Sheikh, Shawkat Mashiyat, Chowdhury Md. Iramul, Micro & Nano Letters, IET . 2015,第10期

机译：栅介电材料对不同沟道长度的弹道肖特基势垒石墨烯纳米带场效应晶体管和碳纳米管场效应晶体管电流-电压特性的依赖性
2. Investigation of Schottky-Barrier carbon nanotube field-effect transistor by an efficient semi-classical numerical modeling [J] . Chen CX, Zhang W, Zhao B, Physics Letters, A . 2009,第2期

机译：肖特基势垒碳纳米管场效应晶体管的高效半经典数值模拟研究
3. Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling [J] . Arash Hazeghi, Tejas Krishnamohan, H.-S. Philip Wong IEEE Transactions on Electron Devices . 2007,第期

机译：肖特基势垒碳纳米管场效应晶体管建模
4. Semi-analytical Model for Schottky-barrier Carbon Nanotube and Graphene Nanoribbon Transistors [C] . Xuebei Yang, Gianluca Fiori, Giuseppe lannaccone, 20th great lakes symposium on VLSI 2010 (GLSVLSI 2010) . 2010

机译：肖特基势垒碳纳米管和石墨烯纳米带晶体管的半解析模型
5. Semi-analytical model for carbon nanotube and graphene nanoribbon transistors. [D] . Yang, Xuebei. 2010

机译：碳纳米管和石墨烯纳米带晶体管的半分析模型。
6. Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications [O] . Meisam Rahmani, Mohammad Taghi Ahmadi, Hediyeh Karimi Feiz Abadi, 2013

机译：用于高速开关应用的三层石墨烯纳米带肖特基势垒FET的分析模型
7. Semi-analytical model for Schottky-barrier carbon nanotube and graphene nanoribbon transistors [O] . X. YANG, FIORI G, IANNACCONE G., 2010

机译：肖特基势垒碳纳米管和石墨烯纳米带晶体管的半解析模型

Semi-analytical Model for Schottky-barrier Carbon Nanotube and Graphene Nanoribbon Transistors

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