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Low Flicker-Noise GaN/AlGaN Heterostructure Field-Effect Transistors for Microwave Communications

机译：用于微波通信的低闪烁噪声GaN / AlGaN异质结构场效应晶体管

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Balandin Morozov Cai; A. Bal; S. V. Morozov; S. Cai; R. Li; K. L. Wang; G. Wijeratne; C. R. Viswanathan; Life Fellow;
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1. Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications [J] . Balandin A., Morozov S.V. IEEE Transactions on Microwave Theory and Techniques . 1999,第8期

机译：用于微波通信的低闪烁噪声GaN / AlGaN异质结构场效应晶体管
2. Influence of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN/GaN heterostructure field-effect transistors [J] . E. Waki, T. Deguchi, A. Nakagawa, Applied Physicsletters . 2008,第10期

机译：低温GaN覆盖层的晶体质量对AlGaN / GaN异质结构场效应晶体管中电流崩塌的影响
3. Comparison of low-temperature GaN, SiO_2, and SiN_x as gate insulators on AlGaN/GaN heterostructure field-effect transistors [J] . C. J. Kao, M. C. Chen, C. J. Tun, Journal of Applied Physics . 2005,第6期

机译：AlGaN / GaN异质结构场效应晶体管上作为栅极绝缘体的低温GaN，SiO_2和SiN_x的比较
4. Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors [C] . Cemil Kayis, C. Y. Zhu, Mo Wu, Gallium nitride materials and devices VI . 2011

机译：InAlN / GaN和AlGaN / GaN异质结构场效应晶体管中电应力的低频噪声测量
5. Process development and characterization of AlGaN/GaN heterostructure field-effect transistors [D] . Ping, Andrew Taiann 1999

机译：AlGaN / GaN异质结构场效应晶体管的工艺开发和表征
6. Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors [O] . Liuan Li, Ryosuke Nakamura, Qingpeng Wang, 2014

机译：自对准栅AlGaN / GaN异质结构场效应晶体管的氮化钛的合成
7. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors [O] . C. Q. Chen, J. P. Zhang, V. Adivarahan, 2003

机译：AlGaN / GaN / AlGaN双重异质结构，用于高功率III-N场效应晶体管
8. Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates [R] . Chichibu, S., Hazu, K. 2011

机译：m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管

Low Flicker-Noise GaN/AlGaN Heterostructure Field-Effect Transistors for Microwave Communications

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