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Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN

机译：阴极缺陷和透射电子显微镜研究晶体缺陷对GaN中光学跃迁的影响

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Salviati Albrecht Zanotti-Fregonara;
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年度 2007
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1. Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires [J] . Yi Wei, Uzuhashi Jun, Chen Jun, Annales de l'I.H.P . 2019,第8期

机译：核壳GaN纳米线中InGaN / GaN量子阱的阴极发光和扫描透射电子显微镜研究
2. Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires [J] . Yi Wei, Uzuhashi Jun, Chen Jun, Annales de l'I.H.P . 2019,第8期

机译：InGaN / GaN量子井In InGaN / GaN量子井扫描透射电子显微镜的阴极发光和扫描透射电子显微镜研究
3. Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 ℃ [J] . Han W. T., Liu H. P., Li B. S. Applied Surface Science . 2018,第OCTa15期

机译：透射电子显微镜和高分辨率电子显微镜研究在600℃下氦离子注入的Si单晶中引起的结构缺陷
4. Characterization of Optical Properties of the Dislocations in GaN Films using Transmission Electron Microscopy Cathodoluminescence [C] . Sung-Dae Kim, Jong-Hwan Lee, Bon-Woong Koo, Microscopy Society of America Annual Meeting;Microanalysis Society Annual meeting;International Metallographic Society Annual meeting . 2012

机译：GaN电子薄膜中位错的光学特性的透射电子显微镜阴极发光法表征
5. Physical Defects and Degradation Mechanisms of GaN-based Electronic Devices Explored by Transmission Electron Microscopy [D] . Lang, Andrew Charles. 2018

机译：透射电子显微镜探索GaN的电子器件的物理缺陷和降解机制
6. Cathodoluminescence and Cross-sectional Transmission Electron Microscopy Studies for Deformation Behaviors of GaN Thin Films Under Berkovich Nanoindentation [O] . Sheng-Rui Jian, I-Ju Teng, Jian-Ming Lu 2008

机译：阴极发光和截面透射电镜研究Berkovich纳米压痕下GaN薄膜的形变行为
7. Cathodoluminescence and Cross-sectional Transmission Electron Microscopy Studies for Deformation Behaviors of GaN Thin Films Under Berkovich Nanoindentation [O] . Sheng-Rui Jian, I-Ju Teng, Jian-Ming Lu 2008

机译：阴极发光和截面透射电子显微镜研究Berkovich纳米压痕作用下GaN薄膜的形变行为
8. Transmission Electron Microscopy Study of Defect Reduction in Two-Step Lateral Epitaxial Overgrown Nonplanar GaN Substrate Templates [R] . Zhou, W. , Ren, D. , Dapkus, P. D. 2005

机译：两步横向外延过度生长的非平面GaN衬底模板中缺陷减少的透射电子显微镜研究

Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN

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