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High-Field Transport of Inversion-Layer Electrons and Holes Including Velocity Overshoot

机译：反向层电子和空穴的高场输运，包括速度超调

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Fariborz Assaderaghi; Dennis Sinitsky; Jeffrey Bokor; Ping K. Ko; Henry Gaw; Chenming Hu;
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年度 2008
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1. High-field transport of inversion-layer electrons and holes including velocity overshoot [J] . Assaderaghi F., Sinitsky D. IEEE Transactions on Electron Devices . 1997,第4期

机译：反转层电子和空穴的高场传输，包括速度超调
2. A model for the drain current of deep submicrometer MOSFETs including electron-velocity overshoot [J] . Roldan J.B., Gamiz F. IEEE Transactions on Electron Devices . 1998,第10期

机译：深亚微米MOSFET的漏电流模型，包括电子速度过冲
3. I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature [J] . J. B. Roldan, F. Gamiz, J. A. Lopez-Villanueva, Journal de Physique, IV: Proceedings of International Conference . 1998,第3期

机译：超亚微米MOSFET的I-V和小信号参数模型，包括明显的电子速度过冲效应，在低温下会增强
4. Observations of electron velocity overshoot during high-field transport in AlN [C] . Ramon Collazo, Raoul Schlesser, Amy Roskowski, Materials Research Society Symposium . 2003

机译：ALN高场运输期间电子速度过冲的观察
5. Improved anodic interfaces in bulk-heterojunction organic photovoltaics via siloxane-based electron-blocking/hole-transporting interfacial layers and transparent conducting oxide treatment. [D] . Hains, Alexander William. 2009

机译：通过基于硅氧烷的电子阻挡/空穴传输界面层和透明导电氧化物处理，在本体-异质结有机光伏中改善了阳极界面。
6. Mechanisms of charge transfer and electronic properties of Cu2ZnGeS4 from investigations of the high-field magnetotransport [O] . Maxim Guc, Erkki Lähderanta, Elena Hajdeu-Chicarosh, -1

机译：Cu2ZnGeS4的电荷转移和电子性质机理的高场磁输运研究
7. VELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN Si INVERSION LAYERS [O] . D. Sinitsky, F. Assaderaghi, M. Orshansky, 1996

机译：si反转层中电子和孔的速度超过

High-Field Transport of Inversion-Layer Electrons and Holes Including Velocity Overshoot

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