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Effects of Source Access Resistance on Gate lag in AlGaN/GaN HEMTs and Current Slump Behavior

机译：源极访问电阻对AlGaN / GaN HEMT中栅极滞后和电流塌陷行为的影响

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K. Horio; A. Nakajima; K. Itagaki;
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年度 2008
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1. Analysis of buffer-trapping effects on gate lag, drain lag and current collapse in AlGaN/GaN HEMTs [J] . K. Horio, A. Nakajima Physica status solidi . 2008,第6期

机译：分析缓冲陷阱对AlGaN / GaN HEMT中栅极滞后，漏极滞后和电流崩溃的影响
2. Analysis of field-plate effects on buffer-related lag phenomena and current collapse in GaN MESFETs and AlGaN/GaN HEMTs [J] . Kazushige Horio, Atsushi Nakajima, Keiichi Itagaki Semiconductor science and technology . 2009,第8期

机译：分析场板对GaN MESFET和AlGaN / GaN HEMT中与缓冲器相关的滞后现象和电流崩溃的影响
3. Reduction of On-Resistance in Ion-Implanted GaN/AlGaN/GaN HEMTs with Low Gate Leakage Current [J] . KAZUKI NOMOTO, rnMASATAKA SATOH, rnTOHRU NAKAMURA Electronics and communications in Japan . 2010,第6期

机译：低栅漏电流降低离子注入GaN / AlGaN / GaN HEMT中的导通电阻
4. Effects of Source Access Resistance on Gate lag in AlGaN/GaN HEMTs and Current Slump Behavior [C] . K. Horio, A. Nakajima, K. Itagaki Device Research Conference . 2007

机译：源进出电阻对AlGaN / GaN HEMTS和电流坍落度行为的浇口滞后的影响
5. Impact of mechanical stress on AlGaN/GaN HEMT performance: Channel resistance and gate current. [D] . Koehler, Andrew Daniel. 2011

机译：机械应力对AlGaN / GaN HEMT性能的影响：沟道电阻和栅极电流。
6. Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature [O] . Tuan-Anh Vuong, Ho-Young Cha, Hyungtak Kim 2021

机译：薄Algan屏障PT-AlGaN / GaN HEMT气体传感器的响应增强在高温下源连接栅极配置
7. Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping [O] . A. Nakajima, K. Itagaki, K. Horio 2015

机译：缓冲俘获对alGaN / GaN HEmT中滞后和电流坍落度的模拟
8. Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs [R] . 2010

机译：自对准aLD alOx T栅极绝缘体，用于siNx钝化alGaN / GaN HEmT中的栅极漏电流抑制

Effects of Source Access Resistance on Gate lag in AlGaN/GaN HEMTs and Current Slump Behavior

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