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AMPLIFICATION PATH LENGTH DEPENDENCE STUDIES OF STIMULATED EMISSION FROM OPTICALLY PUMPED InGaN/GaN MULTIPLE QUANTUM WELLS

机译：光学泵浦的InGaN / GaN多量子阱激发光的放大路径长度相关性研究

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T. J. Schmidt; Schmidt Bidnyk Yong-Hoon; Yong-hoon Cho; A. J. Fischer; J. J. Song; S. Keller;
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年度 2007
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1. Optically Pumped Green (530-560 nm) Stimulated Emissions from InGaN/GaN Multiple-Quantum-Well Triangular-Lattice Nanocolumn Arrays [J] . Shusuke Ishizawa, Katsumi Kishino, Ryuichi Araki, Annales de l'I.H.P . 2011,第5期

机译：InGaN / GaN多量子阱三角晶格纳米柱阵列的光泵浦绿色（530-560 nm）激发发射。
2. InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop [J] . Saiful Alam, Suresh Sundaram, Miryam Elouneg-Jamroz, Superlattices and microstructures . 2017,第APRa期

机译：在InGaN / GaN半体缓冲层上生长的InGaN / InGaN多量子阱，用于蓝到青色发射，具有改善的光发射和效率下降
3. Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm [J] . H. F. Liu, W. Liu, A. M. Yong, Journal of Applied Physics . 2011,第6期

机译：退火对490nm发射波长InGaN / GaN多量子阱结构和光学性能的影响
4. Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells [C] . T.J.Schmidt, S.Bidnyk, Y-H.Cho, Symposium on GaN and related alloys . 1999

机译：光泵浦InGaN / GaN多量子阱中受激发射的放大路径长度相关性研究
5. InGaN/GaN multiple quantum well structures: Submicron structural, optical, electrical and chemical properties. [D] . Li, Ying. 2013

机译：InGaN / GaN多量子阱结构：亚微米结构，光学，电和化学性质。
6. A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates [O] . Dmytro Kundys, Danny Sutherland, Matthew J. Davies, 2016

机译：在a平面和m平面GaN衬底上生长的InGaN / GaN多量子阱的光学和偏振特性的研究
7. Publisher’s Note: “Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes” Appl. Phys. Lett. 70, 2978 (1997) [O] . C. J. Sun, M. Zubair Anwar, Q. Chen, 2011

机译：出版商注意：“带边缘刺激发射的”带边缘多量子孔发光二极管的量子偏移“Appl。物理。吧。 70,2978（1997）

AMPLIFICATION PATH LENGTH DEPENDENCE STUDIES OF STIMULATED EMISSION FROM OPTICALLY PUMPED InGaN/GaN MULTIPLE QUANTUM WELLS

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